公开(公告)号：JP2013244486A

公开(公告)日：2013-12-09

申请号：JP2013109207

申请日：2013-05-23

Applicant: Stmicroelectronics Inc ,  エスティーマイクロエレクトロニクス,インコーポレイテッドSTMicroelectronics, Inc. ,  Internatl Business Mach Corp ,  インターナショナル ビジネス マシーンズ コーポレイションInternational Business Machines Corporation

Inventor： ZHANG JOHN H ,  ECONOMIKOS LAERTIS ,  TSENG WEI-TSU ,  TICKNOR ADAM

IPC: C02F1/42 ,  B01D24/00 ,  B01D36/00 ,  H01L21/304

CPC classification number: H01L21/6704 ,  B01D15/362 ,  B01D15/363 ,  B01D24/008 ,  B01D53/229 ,  B01D53/82 ,  B01D61/18 ,  B01D2201/287 ,  B01D2253/206 ,  B01D2258/0216 ,  B08B3/14 ,  B08B7/0021 ,  H01L21/67017 ,  H01L21/67051

Abstract: PROBLEM TO BE SOLVED: To provide a fluid filtering system and a method for being used during semiconductor processing.SOLUTION: A fluid filtering system filters ions and particles from fluid by a dual medium filter 18b when the fluid is supplied to a semiconductor wafer processing apparatus such as a semiconductor wafer cleaning apparatus. The fluid filtering system is characterized in that the dual medium filter 18b has a housing 44 equipped with an inlet 46 and an outlet 48, the inlet 46 is joined with a fluid supply source and the outlet 48 is joined with a semiconductor wafer manufacturing apparatus and the housing 44 includes an ion exchange medium 35 and a particle filtering medium 37. The ion exchange medium 35 removes ions from the fluid and the particle filtering medium 37 removes particles from the fluid.

Abstract translation: 要解决的问题：提供流体过滤系统和在半导体加工期间使用的方法。解决方案：流体过滤系统当流体被供应到半导体晶片处理装置时通过双介质过滤器18b从流体中过滤离子和颗粒 例如半导体晶片清洁装置。 流体过滤系统的特征在于，双介质过滤器18b具有配备有入口46和出口48的壳体44，入口46与流体供应源连接，出口48与半导体晶片制造装置连接， 壳体44包括离子交换介质35和颗粒过滤介质37.离子交换介质35从流体中去除离子，并且颗粒过滤介质37从流体中去除颗粒。

公开(公告)号：JP2002025955A

公开(公告)日：2002-01-25

申请号：JP2001170638

申请日：2001-06-06

Applicant: IBM

Inventor： MAR H WILLIAM ,  TICKNOR ADAM

IPC: B24B53/00 ,  B24B37/26 ,  B24B53/017 ,  B24B53/12 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing (CMP) pad conditioner for solving the problem that an uneven face is formed during CMP process and the uneven faces are piled up in the following steps. SOLUTION: A conditioner 40 includes non uniform conditioning faces having a plurality of conditioning elements 44. The nonuniform conditioning face includes a first section 46 having a first cutting amount/unit width, and a second section 50 having a second cutting amount/unit width different from the first cutting amount/unit width. The difference of the cutting amount is given according to a different projection width of each conditioning element and according to the difference in linear density between the two sections.