公开(公告)号：JP2003110103A

公开(公告)日：2003-04-11

申请号：JP2002218768

申请日：2002-07-26

Applicant: IBM

Inventor： PARK HEEMYONG ,  MAR H WILLIAM ,  ASSADERAGHI FARIBORZ

IPC: H01L21/283 ,  H01L21/28 ,  H01L21/3215 ,  H01L21/336 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for shielding high dielectric constant materials from the thermal effects of annealing. SOLUTION: A semiconductor transistor is formed on a substrate which has an activated source region, drain region, gate region, channel formed between the source region and the drain region and arranged under the gate region, and a high dielectric constant material which is not thermally deteriorated and formed in at least a part of the gate region.

公开(公告)号：JP2002025955A

公开(公告)日：2002-01-25

申请号：JP2001170638

申请日：2001-06-06

Applicant: IBM

Inventor： MAR H WILLIAM ,  TICKNOR ADAM

IPC: B24B53/00 ,  B24B37/26 ,  B24B53/017 ,  B24B53/12 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing (CMP) pad conditioner for solving the problem that an uneven face is formed during CMP process and the uneven faces are piled up in the following steps. SOLUTION: A conditioner 40 includes non uniform conditioning faces having a plurality of conditioning elements 44. The nonuniform conditioning face includes a first section 46 having a first cutting amount/unit width, and a second section 50 having a second cutting amount/unit width different from the first cutting amount/unit width. The difference of the cutting amount is given according to a different projection width of each conditioning element and according to the difference in linear density between the two sections.