公开(公告)号：DE69010308D1

公开(公告)日：1994-08-04

申请号：DE69010308

申请日：1990-09-03

Applicant: IBM

Inventor： BATEY JOHN ,  TIERNEY ELAINE

IPC: H01L21/316 ,  C23C16/40

Abstract: A method for depositing high quality silicon dioxide (26) in a plasma enhanced chemical vapor deposition tool is described. The reactant gases are introduced into the tool together with a large amount of an inert carrier gas. A plasma discharge is established in the tool by using a high RF power density thereby depositing high quality silicon dioxide (26) at very high deposition rates. In a single wafer tool, the RF power density is in the range of 1-4 W/cm and the deposition rate is from 60 - 150 nm (600-1500 angstroms) per minute for depositing high quality SiO2 films.

公开(公告)号：DE69010308T2

公开(公告)日：1995-01-26

申请号：DE69010308

申请日：1990-09-03

Applicant: IBM

Inventor： BATEY JOHN ,  TIERNEY ELAINE

IPC: H01L21/316 ,  C23C16/40

Abstract: A method for depositing high quality silicon dioxide (26) in a plasma enhanced chemical vapor deposition tool is described. The reactant gases are introduced into the tool together with a large amount of an inert carrier gas. A plasma discharge is established in the tool by using a high RF power density thereby depositing high quality silicon dioxide (26) at very high deposition rates. In a single wafer tool, the RF power density is in the range of 1-4 W/cm and the deposition rate is from 60 - 150 nm (600-1500 angstroms) per minute for depositing high quality SiO2 films.