公开(公告)号：GB2565243B

公开(公告)日：2019-07-31

申请号：GB201816545

申请日：2017-02-24

Applicant: IBM

Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  LUKAS KULL ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA ,  MILOS STANISAVLJEVIC

IPC: G06N3/063

Abstract: Artificial neuron apparatus includes a resistive memory cell connected in an input circuit having a neuron input, for receiving neuron input signals, and a current source for supplying a read current to the cell. The input circuit is selectively configurable in response to a set of control signals, defining alternating read and write phases of operation, to apply the read current to the cell during the read phase and to apply a programming current to the cell, for programming cell resistance, on receipt of a neuron input signal during the write phase. The cell resistance is progressively changed from a first state to a second state in response to successive neuron input signals. The apparatus further includes an output circuit comprising a neuron output and a digital latch which is connected to the input circuit for receiving a measurement signal dependent on cell resistance.

公开(公告)号：GB2552577A

公开(公告)日：2018-01-31

申请号：GB201708045

申请日：2015-10-13

Applicant: IBM

Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA

IPC: G06N3/063

Abstract: A neuromorphic synapse (11) comprises a resistive memory cell (15) connected in circuitry having first and second input terminals (21,22).These input terminals (21,22) respectively receive pre-neuron and post-neuron action signals, each having a read portion and a write portion, in use. The circuitry also has an output terminal (23) for providing a synaptic output signal which is dependent on resistance of the memory cell (15).The circuitry is operable such that the synaptic output signal is provided at the output terminal (23) in response to application at the first input terminal (21) of the read portion of the pre-neuron action signal,and such that a programming signal,for programming resistance of the memory cell (15), is applied to the cell (15) in response to simultaneous application of the write portions of the pre-neuron and post-neuron action signals at the first and second input terminals (21,22) respectively. The synapse (11) can be adapted for operation with identical pre-neuron and post-neuron action signals.

公开(公告)号：GB2552266A

公开(公告)日：2018-01-17

申请号：GB201711974

申请日：2016-03-09

Applicant: IBM

Inventor： WALTER HAEBERLE ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA

IPC: G01V3/08 ,  G01R33/09

Abstract: A sensor arrangement for position sensing comprises a first magnetoresistive element (1) and a second magnetoresistive element (2). A magnetic field source (3) provides a magnetic field with a first magnetic pole (N) and a second magnetic pole (S). The magnetic field source (3) is arranged between the first magnetoresistive element (1) and the second magnetoresistive element (2) with the first magnetic pole (N) facing the first magnetoresistive element (1) and the second magnetic pole (S) facing the second magnetoresistive element (2). The first magnetoresistive element (1) is arranged in the magnetic field and provides a first output signal (R1) dependent on a position of the first magnetoresistive element (1) relative to the magnetic field source (3). The second magnetoresistive element (2) is arranged in the magnetic field and provides a second output signal (R2) dependent on a position of the second magnetoresistive element (2) relative to the magnetic field source (3). A measurement unit is configured to determine a position of the magnetic field source (3) relative to the first and the second magnetoresistive elements (1, 2) dependent on the first output signal (R1) and the second output signal (R2).

公开(公告)号：GB2556550B

公开(公告)日：2019-10-02

申请号：GB201801088

申请日：2016-06-08

Applicant: IBM

Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  MANUEL LE GALLO ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA

IPC: G06N3/04 ,  G06N3/063

公开(公告)号：GB2565243A

公开(公告)日：2019-02-06

申请号：GB201816545

申请日：2017-02-24

Applicant: IBM

Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  LUKAS KULL ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA ,  MILOS STANISAVLJEVIC

IPC: G06N3/063

Abstract: Artificial neuron apparatus includes a resistive memory cell connected in an input circuit having a neuron input, for receiving neuron input signals, and a current source for supplying a read current to the cell. The input circuit is selectively configurable in response to a set of control signals, defining alternating read and write phases of operation, to apply the read current to the cell during the read phase and to apply a programming current to the cell, for programming cell resistance, on receipt of a neuron input signal during the write phase. The cell resistance is progressively changed from a first state to a second state in response to successive neuron input signals. The apparatus further includes an output circuit comprising a neuron output and a digital latch which is connected to the input circuit for receiving a measurement signal dependent on cell resistance.

公开(公告)号：GB2552266B

公开(公告)日：2018-05-23

申请号：GB201711974

申请日：2016-03-09

Applicant: IBM

Inventor： WALTER HAEBERLE ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA

IPC: G01V3/08 ,  G01R33/09

公开(公告)号：GB2556550A

公开(公告)日：2018-05-30

申请号：GB201801088

申请日：2016-06-08

Applicant: IBM

Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  MANUEL LE GALLO ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA

IPC: G06N3/04 ,  G06N3/063

Abstract: A neuromorphic processing device (1) has a device input (2), for receiving an input data signal, and an assemblage of neuron circuits (3). Each neuron circuit (3) comprises a resistive memory cell (14) which is arranged to store a neuron state, indicated by cell resistance, and to receive neuron input signals (11) for programming cell resistance to vary the neuron state, and a neuron output circuit (15) for supplying a neuron output signals (12) in response to cell resistance traversing a threshold. The device (1) includes an input signal generator (4) connected to the device input (2) and the assemblage of neuron circuits (3), for generating neuron input signals (11) for the assemblage in dependence on the input data signal. The device (1) further includes a device output circuit (5), connected to neuron output circuits (15) of the assemblage, for producing a device output signal dependent on neuron output signals (12) of the assemblage, whereby the processing device (1) exploits stochasticity of resistive memory cells of the assemblage.

公开(公告)号：GB2552577B

公开(公告)日：2018-05-02

申请号：GB201708045

申请日：2015-10-13

Applicant: IBM

Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA

IPC: G06N3/063

Abstract: A neuromorphic synapse with a resistive memory cell connected in circuitry having first and second input terminals. The input terminals respectively receive pre-neuron and post-neuron action signals, each having a read portion and a write portion, in use. The circuitry includes an output terminal for providing a synaptic output signal which is dependent on resistance of the memory cell. The circuitry is configured such that the synaptic output signal is provided at the output terminal in response to application at the first input terminal of the read portion of the pre-neuron action signal, and such that a programming signal, for programming resistance of the memory cell, is applied to the cell in response to simultaneous application of the write portions of the pre-neuron and post-neuron action signals at the first and second input terminals respectively. The synapse can be adapted for operation with identical pre-neuron and post-neuron action signals.

公开(公告)号：GB2532787A

公开(公告)日：2016-06-01

申请号：GB201421183

申请日：2014-11-28

Applicant: IBM

Inventor： ANGELIKI PANTAZI ,  TOMAS TUMA ,  ABU SEBASTIAN

IPC: G01D5/12 ,  G01B7/00 ,  G01R33/09

Abstract: A sensor arrangement for position sensing comprises a magnetic field source (2) and a magnetoresistive element (1) arranged in a magnetic field generated by the magnetic field source (2). The magnetoresistive element (1) provides an output signal (R) dependent on a position (x) of the magnetoresistive element (1) relative to the magnetic field source (2). A feedback controller (3) is configured to receive the output signal (R) of the magnetoresistive element (1) and is configured to adjust one or more of the position (x) of the magnetoresistive element relative to the magnetic field source (2) and a the strength of the magnetic field generated by the magnetic field source (2) acting on the magnetoresistive element dependent on the output signal (R) of the magnetoresistive element. The sensor comprises a conductive layer between two magnetic layers.