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    Electromechanical switch device and method of operating the same
    2.
    发明专利
    Electromechanical switch device and method of operating the same 未知

    公开(公告)号：GB2494603B

    公开(公告)日：2016-05-04

    申请号：GB201300361

    申请日：2011-06-08

    Applicant: IBM

    Inventor： MICHEL DESPONT ,  ABU SEBASTIAN ,  CHRISTOPH HAGLEITNER ,  CHARALAMPOS POZIDIS

    IPC: H01H59/00 ,  H01H1/00 ,  H01H47/00

    Abstract: An electromechanical switch device includes a first switch portion, a second switch portion and an actuator device. The actuator device is configured to provide an actuation force, thereby actuating the first and second switch portion relative to each other to change from a disconnected to a connected state. The actuator device is further configured to provide the actuation force with a modulation at least when the first and second switch portion are in the connected state. A method of operating an electromechanical switch device is also provided.

    Neuromorphic synapses
    3.
    发明专利
    Neuromorphic synapses 未知

    公开(公告)号：GB2552577A

    公开(公告)日：2018-01-31

    申请号：GB201708045

    申请日：2015-10-13

    Applicant: IBM

    Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA

    IPC: G06N3/063

    Abstract: A neuromorphic synapse (11) comprises a resistive memory cell (15) connected in circuitry having first and second input terminals (21,22).These input terminals (21,22) respectively receive pre-neuron and post-neuron action signals, each having a read portion and a write portion, in use. The circuitry also has an output terminal (23) for providing a synaptic output signal which is dependent on resistance of the memory cell (15).The circuitry is operable such that the synaptic output signal is provided at the output terminal (23) in response to application at the first input terminal (21) of the read portion of the pre-neuron action signal,and such that a programming signal,for programming resistance of the memory cell (15), is applied to the cell (15) in response to simultaneous application of the write portions of the pre-neuron and post-neuron action signals at the first and second input terminals (21,22) respectively. The synapse (11) can be adapted for operation with identical pre-neuron and post-neuron action signals.

    Sensor arrangement for position sensing
    4.
    发明专利
    Sensor arrangement for position sensing 未知

    公开(公告)号：GB2552266A

    公开(公告)日：2018-01-17

    申请号：GB201711974

    申请日：2016-03-09

    Applicant: IBM

    Inventor： WALTER HAEBERLE ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA

    IPC: G01V3/08 ,  G01R33/09

    Abstract: A sensor arrangement for position sensing comprises a first magnetoresistive element (1) and a second magnetoresistive element (2). A magnetic field source (3) provides a magnetic field with a first magnetic pole (N) and a second magnetic pole (S). The magnetic field source (3) is arranged between the first magnetoresistive element (1) and the second magnetoresistive element (2) with the first magnetic pole (N) facing the first magnetoresistive element (1) and the second magnetic pole (S) facing the second magnetoresistive element (2). The first magnetoresistive element (1) is arranged in the magnetic field and provides a first output signal (R1) dependent on a position of the first magnetoresistive element (1) relative to the magnetic field source (3). The second magnetoresistive element (2) is arranged in the magnetic field and provides a second output signal (R2) dependent on a position of the second magnetoresistive element (2) relative to the magnetic field source (3). A measurement unit is configured to determine a position of the magnetic field source (3) relative to the first and the second magnetoresistive elements (1, 2) dependent on the first output signal (R1) and the second output signal (R2).

    Performing dot product operations using a memristive crossbar array
    5.
    发明专利
    Performing dot product operations using a memristive crossbar array 未知

    公开(公告)号：GB2601701A

    公开(公告)日：2022-06-08

    申请号：GB202203329

    申请日：2020-08-14

    Applicant: IBM

    Inventor： MARTINO DAZZI ,  PIER ANDREA FRANCESE ,  ABU SEBASTIAN ,  MANUEL LE GALLO-BOURDEAU ,  EVANGELOS STAVROS ELEFTHERIOU

    IPC: G06N3/063 ,  G06F7/544 ,  G06F17/16 ,  G06N3/04 ,  G11C11/54 ,  G11C13/00

    Abstract: A method, computer system, and computer program product of performing a matrix convolution on a multidimensional input matrix for obtaining a multidimensional output matrix. The matrix convolution may include a set of dot product operations for obtaining all elements of the output matrix. Each dot product operation of the set of dot product operations may include an input submatrix of the input matrix and at least one convolution matrix. The method may include providing a memristive crossbar array configured to perform a vector matrix multiplication. A subset of the set of dot product operations may be computed by storing the convolution matrices of the subset of dot product operations in the crossbar array and inputting to the crossbar array one input vector comprising all distinct elements of the input submatrices of the subset.

    Resistive memory device
    6.
    发明专利
    Resistive memory device 未知

    公开(公告)号：GB2580837B

    公开(公告)日：2021-06-30

    申请号：GB202005840

    申请日：2018-09-13

    Applicant: IBM ,  RWTH AACHEN

    Inventor： WABE KOELMANS ,  ABU SEBASTIAN ,  VARA JONNALAGADDA ,  MARTIN SALINGA ,  BENEDIKT KERSTING

    IPC: G11C11/56 ,  H10B99/00 ,  H01L45/00

    Abstract: The invention is directed to a resistive memory device comprising a control unit for controlling a memory cell of the memory device. The memory cell includes a first terminal, a second terminal and a phase change segment comprising a phase-change material. The phase change segment is arranged between the first terminal and the second terminal. The phase change material is antimony. The phase change segment retains an amorphous region during a write operation. The control unit, during the write operation, applies an electrical programming pulse to the terminals to cause a portion of the phase change segment to transition from a crystalline phase to an amorphous phase comprising the amorphous region. A trailing edge duration of the electrical programming pulse is adjusted based on ambient temperature to prevent re-crystallization of the amorphous region. Shorter trailing edge durations are used at increasing ambient temperatures.

    Artificial neuron apparatus
    7.
    发明专利
    Artificial neuron apparatus 未知

    公开(公告)号：GB2565243B

    公开(公告)日：2019-07-31

    申请号：GB201816545

    申请日：2017-02-24

    Applicant: IBM

    Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  LUKAS KULL ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA ,  MILOS STANISAVLJEVIC

    IPC: G06N3/063

    Abstract: Artificial neuron apparatus includes a resistive memory cell connected in an input circuit having a neuron input, for receiving neuron input signals, and a current source for supplying a read current to the cell. The input circuit is selectively configurable in response to a set of control signals, defining alternating read and write phases of operation, to apply the read current to the cell during the read phase and to apply a programming current to the cell, for programming cell resistance, on receipt of a neuron input signal during the write phase. The cell resistance is progressively changed from a first state to a second state in response to successive neuron input signals. The apparatus further includes an output circuit comprising a neuron output and a digital latch which is connected to the input circuit for receiving a measurement signal dependent on cell resistance.

    Projected memory device with reduced minimum conductance state
    8.
    发明专利
    Projected memory device with reduced minimum conductance state 未知

    公开(公告)号：GB2603999A

    公开(公告)日：2022-08-24

    申请号：GB202116055

    申请日：2021-11-09

    Applicant: IBM

    Inventor： BENEDIKT KERSTING ,  GHAZI SARWAT SYED ,  VARA SUDANANDA PRASAD JONNALAGADDA ,  MANUEL LE GALLO-BOURDEAU ,  ABU SEBASTIAN ,  TIMOTHY MATHEW PHILIP

    IPC: H01L45/00 ,  G11C11/56 ,  G11C13/00

    Abstract: A projected phase change memory device 100 has phase change material and a projection layer (liner) between first and second electrodes (104, 106). Device conductivity states depend on a ratio between crystalline and amorphous phases of the phase-change material. A size of a conductive portion 110 of the projection layer along an amorphous phase (112, 114, 116) in a reset state of the device is confined to less than a size of the amorphous phase. The projection layer may include a low conductivity, high resistance portion 118, doped differently to the conductive portion, whereby hydrogen or nitrogen doping may change along a gradient for a smooth resistance change. A discontinuity in conductance states of the memory device is created and minimum conductance in the reset state is reduced. The device may be a mushroom cell, lateral cell (fig. 5) or confined cell (fig.6) type, for in-memory and neuromorphic computing.

    Artificial neuron apparatus
    10.
    发明专利
    Artificial neuron apparatus 未知

    公开(公告)号：GB2565243A

    公开(公告)日：2019-02-06

    申请号：GB201816545

    申请日：2017-02-24

    Applicant: IBM

    Inventor： EVANGELOS STAVROS ELEFTHERIOU ,  LUKAS KULL ,  ANGELIKI PANTAZI ,  ABU SEBASTIAN ,  TOMAS TUMA ,  MILOS STANISAVLJEVIC

    IPC: G06N3/063

    Abstract: Artificial neuron apparatus includes a resistive memory cell connected in an input circuit having a neuron input, for receiving neuron input signals, and a current source for supplying a read current to the cell. The input circuit is selectively configurable in response to a set of control signals, defining alternating read and write phases of operation, to apply the read current to the cell during the read phase and to apply a programming current to the cell, for programming cell resistance, on receipt of a neuron input signal during the write phase. The cell resistance is progressively changed from a first state to a second state in response to successive neuron input signals. The apparatus further includes an output circuit comprising a neuron output and a digital latch which is connected to the input circuit for receiving a measurement signal dependent on cell resistance.

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