公开(公告)号：SG72919A1

公开(公告)日：2000-05-23

申请号：SG1999000172

申请日：1999-01-26

Applicant: IBM

Inventor： NOWAK EDWARD JOSEPH ,  TONG MINH HO

IPC: H01L21/822 ,  H01L21/76 ,  H01L27/02 ,  H01L27/04 ,  H01L27/088 ,  H01L27/12 ,  G11B27/00

Abstract: A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an isolation layer and a second circuit region adjacent the first circuit region having a second device layer over a well. An implant layer is implanted beneath the isolation layer in the first circuit region, which will connect to the well of the second circuit region.