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公开(公告)号:WO02067425A2
公开(公告)日:2002-08-29
申请号:PCT/GB0200516
申请日:2002-02-07
Inventor: BERNSTEIN KERRY , NOWAK EDWARD JOSEPH
IPC: H01L27/092 , H01L27/12 , H03K3/356
CPC classification number: H01L27/1203 , H01L27/0922 , H03K3/356113
Abstract: A differential circuit to be used as a latch-up for asymmetric-double-gate complementary metal oxide semiconductor (DGCMOS) devices is provided. Specifically, the differential circuit comprises an asymmetric-DGCMOS device having the weak gates tied to input circuitry and strong gates that are used in cross-coupling.
Abstract translation: 提供了用作非对称双栅互补金属氧化物半导体(DGCMOS)器件的闭锁的差分电路。 具体地说,差分电路包括一个非对称DGCMOS器件,其具有连接到输入电路的弱栅极和用于交叉耦合的强栅极。
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公开(公告)号:DE60231792D1
公开(公告)日:2009-05-14
申请号:DE60231792
申请日:2002-02-07
Applicant: IBM
Inventor: BERNSTEIN KERRY , NOWAK EDWARD JOSEPH
IPC: H03K3/356 , H01L27/092 , H01L27/12
Abstract: A differential circuit to be used as a latch-up for asymmetric-double-gate complementary metal oxide semiconductor (DGCMOS) devices. The differential circuit includes an asymmetric-DGCMOS device having the weak gates tied to input circuitry and strong gates that are used in cross-coupling.
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公开(公告)号:DE69116227T2
公开(公告)日:1996-07-04
申请号:DE69116227
申请日:1991-04-13
Applicant: IBM
Inventor: LEACH MICHAEL ALBERT , MACHESNEY BRIAN JOHN , NOWAK EDWARD JOSEPH
IPC: H01L21/304 , B24B37/013 , G01B7/14 , H01L21/302 , H01L21/66 , H01L21/30 , G01B7/06
Abstract: The present invention relates to a method and apparatus for remotely detecting impedance. It is specifically adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first, or stationary coil (48) having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil (48) to provide a magnetic flux in the air gap (66,68,70,72). A second coil (46) is mounted for rotation on the polishing table (26), in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts (42) which are embedded in the surface of the polishing wheel. The contacts are positioned to engage the surface of the substrate which is being polished and provide a load on the second or rotating coil. The rotating coil, when it is in the air gap (66,68,70,72) of the stationary coil, will perturb the flux field therein as a function of the resistance of the load caused by the contacts (42) contacting either a conducting surface or a non-conducting surface. This perturbance of the flux field is measured as a change in the induced voltage in the stationary coil which in turn is converted to a signal which is processed to indicate the end point of polishing, the end point being when a metallic layer has been removed to expose a dielectric layer therebeneath or, conversely, when a dielectric layer has been removed to expose a metallic layer therebeneath.
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公开(公告)号:SG72919A1
公开(公告)日:2000-05-23
申请号:SG1999000172
申请日:1999-01-26
Applicant: IBM
Inventor: NOWAK EDWARD JOSEPH , TONG MINH HO
IPC: H01L21/822 , H01L21/76 , H01L27/02 , H01L27/04 , H01L27/088 , H01L27/12 , G11B27/00
Abstract: A semiconductor device is disclosed that provides a decoupling capacitance and method for the same. The semiconductor device includes a first circuit region having a first device layer over an isolation layer and a second circuit region adjacent the first circuit region having a second device layer over a well. An implant layer is implanted beneath the isolation layer in the first circuit region, which will connect to the well of the second circuit region.
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公开(公告)号:DE69116227D1
公开(公告)日:1996-02-22
申请号:DE69116227
申请日:1991-04-13
Applicant: IBM
Inventor: LEACH MICHAEL ALBERT , MACHESNEY BRIAN JOHN , NOWAK EDWARD JOSEPH
IPC: H01L21/304 , B24B37/013 , G01B7/14 , H01L21/302 , H01L21/66 , H01L21/30 , G01B7/06
Abstract: The present invention relates to a method and apparatus for remotely detecting impedance. It is specifically adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first, or stationary coil (48) having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil (48) to provide a magnetic flux in the air gap (66,68,70,72). A second coil (46) is mounted for rotation on the polishing table (26), in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts (42) which are embedded in the surface of the polishing wheel. The contacts are positioned to engage the surface of the substrate which is being polished and provide a load on the second or rotating coil. The rotating coil, when it is in the air gap (66,68,70,72) of the stationary coil, will perturb the flux field therein as a function of the resistance of the load caused by the contacts (42) contacting either a conducting surface or a non-conducting surface. This perturbance of the flux field is measured as a change in the induced voltage in the stationary coil which in turn is converted to a signal which is processed to indicate the end point of polishing, the end point being when a metallic layer has been removed to expose a dielectric layer therebeneath or, conversely, when a dielectric layer has been removed to expose a metallic layer therebeneath.
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