公开(公告)号：JPH10270446A

公开(公告)日：1998-10-09

申请号：JP9011097

申请日：1997-03-24

Applicant: IBM

Inventor： TSUJI SATOSHI ,  TAKATSUJI HIROSHI ,  TSUJIMOTO KATSUHIRO

IPC: H01L23/52 ,  B32B15/02 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49

Abstract: PROBLEM TO BE SOLVED: To obtain a low-electric-resistance wiring layer having a high thermal stability, high stress-migration resistance and no defect such as hillock by providing a multi-layer wiring composed of layers having substantially same components where the grain size of each layer is nearly equal to its thickness. SOLUTION: A wiring layer 50 is composed of layers 52, 54, 56 having substantially the same compsn. on a substrate 17. The size d of the crystal grains 60 is pref. nearly equal to the thickness h of each layer 52, 54, 56 or has a relation of 0.5