公开(公告)号：US3641402A

公开(公告)日：1972-02-08

申请号：US3641402D

申请日：1969-12-30

Applicant: IBM

Inventor： REVITZ MARTIN ,  TURENE FRANCIS E

IPC: H01L23/482 ,  H01L23/532 ,  H01L1/14

CPC classification number: H01L23/53242 ,  H01L23/4822 ,  H01L24/01 ,  H01L2924/01322 ,  H01L2924/00

Abstract: A deposited film of gold is adhered to a layer of silicon dioxide by a deposited film of Beta tantalum. After the gold is deposited on the Beta tantalum, a second film of Beta tantalum is deposited on the gold. This forms a composite sandwich adhering the gold to the silicon dioxide without decreasing the conductivity of the gold and allowing another layer of silicon dioxide to be adhered to the second film of Beta tantalum.

Abstract translation: 通过沉积的β钽膜将沉积的金膜附着到二氧化硅层上。 在金沉积在β钽上之后，第二层β钽沉积在金上。 这形成了将金粘附到二氧化硅上而不降低金的导电性并允许另一层二氧化硅粘附到第二薄膜的钽的复合夹层。