公开(公告)号：DE69013709D1

公开(公告)日：1994-12-08

申请号：DE69013709

申请日：1990-01-11

Applicant: IBM

Inventor： HACKER NIGEL PATRICK ,  TYNDALL III GEORGE WILLIAM

IPC: H01L21/205 ,  C23C16/27 ,  C30B25/02 ,  C30B29/04 ,  H01L21/314 ,  C23C16/26 ,  C23C16/04

Abstract: Diamond films are deposited at substrates below temperatures of 400 DEG C by chemical vapour deposition using a high powered pulsed laser and a vapour which is an aliphatic carboxylic acid or an aromatic carboxylic anhydride.

公开(公告)号：DE69013709T2

公开(公告)日：1995-05-18

申请号：DE69013709

申请日：1990-01-11

Applicant: IBM

Inventor： HACKER NIGEL PATRICK ,  TYNDALL III GEORGE WILLIAM

IPC: H01L21/205 ,  C23C16/27 ,  C30B25/02 ,  C30B29/04 ,  H01L21/314 ,  C23C16/26 ,  C23C16/04

Abstract: Diamond films are deposited at substrates below temperatures of 400 DEG C by chemical vapour deposition using a high powered pulsed laser and a vapour which is an aliphatic carboxylic acid or an aromatic carboxylic anhydride.