公开(公告)号：JP2000235190A

公开(公告)日：2000-08-29

申请号：JP3422799

申请日：1999-02-12

Applicant: IBM

Inventor： TOKUHIRO OSAMU ,  UEDA HIROYUKI

IPC: G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To remove an etching stopper layer existing on the crossing section of a gate line and a signal line without increasing the exposure processes and to decrease the number of processes, especially the number of exposure processes by forming one or plural openings on the crossing section. SOLUTION: A gate electrode 4 and a gate line 5 integrally connected to the gate electrode 4 are formed on a light-transmitting substrate 2. Two rectangular slit-like openings 5b are formed at the section 5a (crossing section) where the gate line 5 crosses a signal line through an insulating layer. When an etching stopper 12 in the almost same form as a photoresist, namely in the almost same form as the gate electrode 4 and gate line 5, is to be formed by wet etching, the etching stopper layer 12 is removed from the crossing section 5a where the openings 5b are formed by the side-etching effect that the etching stopper 12 is etched in the width direction.

公开(公告)号：JP2000114532A

公开(公告)日：2000-04-21

申请号：JP27868998

申请日：1998-09-30

Applicant: IBM ,  TOSHIBA CORP

Inventor： TOKUHIRO OSAMU ,  UEDA HIROYUKI ,  MACHIDA MASAHIKO

IPC: G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/49 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To improve product yield and quality of a liquid-crystal display panel by, related to a method for manufacturing a liquid-crystal display panel, decreasing the number of processes, especially for exposure process, for improved productivity and lower manufacturing cost while occurrence of transistor defect related to an etching stopper part is suppressed. SOLUTION: After a gate insulating film 6, a channel layer 8, an etching stopper layer are film-formed on a translucent substrate 2 where a gate electrode 4 is formed, the rear surface of the substrate 2 is exposed with the gate electrode 4 as a light-shielding mask by a photolithography technology, a resist is developed as it is, and the etching stopper layer is etched to form an etching stopper 14. Further, after a source/drain layer is film-formed, the remaining parts of the source/drain layer and the etching stopper are etched by a chemical vapor-phase etching.