公开(公告)号：JPH1056000A

公开(公告)日：1998-02-24

申请号：JP14674097

申请日：1997-06-04

Applicant: IBM

Inventor： KAARU JIEI RADENSU ,  SHINSHIA EI FUEACHIYOKU ,  REEPIN RII ,  RICHIYAADO MAASU RUJIERO ,  UIRIAMU JIYOOZEFU SUROBUITSU

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/60

Abstract: PROBLEM TO BE SOLVED: To use a device, having a nitride silicon etch-stop layer, by supplying a gas etching agent mixture containing C4 F8 , CO and inert gas in the ratio in a specified range. SOLUTION: A gate stack 10 is etched, and a side wall 13 of the gate stack 10 obtained as a result is oxidized for sticking a thin silicon nitride liner 14. Then phosphorus glass silicate is laminated by low pressure chemical vapor phase sticking, etc., as an upper layer 15 of the oxide. Then the upper layer 15 is flattened by mechanochemical polishing, etc., to form a borderless contact pattern. And the oxide upper layer 15 is dry-etched for the nitride liner 14. At this time, a gas etching agent mixture containing 0.5-5% of C4 F8 , 0-78% of CO and 18-97% of inert gas is supplied. So that a device having a silicon nitride etch-stop layer can be used.