公开(公告)号：DE69534699T2

公开(公告)日：2006-07-20

申请号：DE69534699

申请日：1995-09-22

Applicant: IBM

Inventor： DOBUZINSKY DAVID MARK ,  MATSUDA TETSUO ,  VAN NGUYEN SON ,  RYAN JAMES GARDNER

IPC: C23C16/30 ,  H01L21/316 ,  C23C16/40 ,  C23C16/505 ,  H01L21/31

Abstract: Fluorine-doped oxide is formed that is resistant to water absorption by the use of two sources of silicon, one being the fluorine precursor and the other being available to react with excess fluorine from the fluorine precursor, thereby reducing the number of fluorine radicals in the layer; the fluorine precursor containing a glass-forming element that combines with the other glass constituents to carry into the gas a diatomic radical containing one atom of fluorine and one atom of the glass-forming element. In particular, comparison between traces of undoped oxide and fluorosilicate glass clearly shows that the former has a greater SIOH concentration which is a manufacturing yield detractor.

公开(公告)号：DE69534699D1

公开(公告)日：2006-01-26

申请号：DE69534699

申请日：1995-09-22

Applicant: IBM

Inventor： DOBUZINSKY DAVID MARK ,  MATSUDA TETSUO ,  VAN NGUYEN SON ,  RYAN JAMES GARDNER

IPC: C23C16/30 ,  C23C16/40 ,  C23C16/505 ,  H01L21/31 ,  H01L21/316

Abstract: Fluorine-doped oxide is formed that is resistant to water absorption by the use of two sources of silicon, one being the fluorine precursor and the other being available to react with excess fluorine from the fluorine precursor, thereby reducing the number of fluorine radicals in the layer; the fluorine precursor containing a glass-forming element that combines with the other glass constituents to carry into the gas a diatomic radical containing one atom of fluorine and one atom of the glass-forming element. In particular, comparison between traces of undoped oxide and fluorosilicate glass clearly shows that the former has a greater SIOH concentration which is a manufacturing yield detractor.