公开(公告)号：JPH11340504A

公开(公告)日：1999-12-10

申请号：JP3965899

申请日：1999-02-18

Applicant: IBM

Inventor： PEKARIK JOHN J ,  VARHUE WALTER J

IPC: C09K11/77 ,  H01L33/00 ,  H01L33/34 ,  H01S3/0959 ,  H01S3/16 ,  H01S5/00 ,  H01S5/30 ,  H01S5/50 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor structure containing a rare-earth dopant, which is particularly useful to optical devices, such as light-emitting diode(LED), laser, optical amplifier, etc., and a method for manufacturing the structure. SOLUTION: A region 5 positioned near a p-n junction 4 is doped with a rare-earth element. A semiconductor structure doped with rare-earth element contains a p-n junction, having a first p-type region 2 and a first n-type region 3 in a semiconductor. The structure also contains a charge source coupled with either one of the regions 2 and 3 and excites rare-earth atoms by supplying charged carriers.

公开(公告)号：DE69924906D1

公开(公告)日：2005-06-02

申请号：DE69924906

申请日：1999-02-23

Applicant: IBM

Inventor： PEKARIK JOHN J ,  VARHUE WALTER J

IPC: C09K11/77 ,  H01L33/00 ,  H01L33/34 ,  H01S3/0959 ,  H01S3/16 ,  H01S5/00 ,  H01S5/30 ,  H01S5/50

Abstract: A structure having a p-n junction in a semiconductor having a first p-type region and a first n-type region along with a region located in the vicinity of the p-n junction that is doped with a rare-earth element. In addition, the structure includes a charge source coupled to one of the p- type region and n-type region for providing charge carriers to excite atoms of the rare-earth element. Also provided is a method for producing the structure that includes providing a bipolar junction transistor; doping a region in a collector of the transistor with a rare-earth element; and biasing the transistor to generate light emission from the rare-earth element doped region.

公开(公告)号：DE69924906T2

公开(公告)日：2006-06-01

申请号：DE69924906

申请日：1999-02-23

Applicant: IBM

Inventor： PEKARIK JOHN J ,  VARHUE WALTER J

IPC: C09K11/77 ,  H01L33/00 ,  H01L33/34 ,  H01S3/0959 ,  H01S3/16 ,  H01S5/00 ,  H01S5/30 ,  H01S5/50

Abstract: A structure having a p-n junction in a semiconductor having a first p-type region and a first n-type region along with a region located in the vicinity of the p-n junction that is doped with a rare-earth element. In addition, the structure includes a charge source coupled to one of the p- type region and n-type region for providing charge carriers to excite atoms of the rare-earth element. Also provided is a method for producing the structure that includes providing a bipolar junction transistor; doping a region in a collector of the transistor with a rare-earth element; and biasing the transistor to generate light emission from the rare-earth element doped region.