公开(公告)号：CA2018502C

公开(公告)日：1994-01-11

申请号：CA2018502

申请日：1990-06-07

Applicant: IBM

Inventor： BUCHMANN PETER L ,  HARDER CHRISTOPH S ,  VOGELI OTTO

IPC: H01S5/00 ,  H01L33/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/14 ,  H01S3/103 ,  H01S3/098

Abstract: Integrated semiconductor structure with optically coupled laser diode and photodiode, both devices having etched, vertical facets. The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode-stability.