公开(公告)号：US3858189A

公开(公告)日：1974-12-31

申请号：US31940872

申请日：1972-12-29

Applicant: IBM

Inventor： WALKER E ,  BEAUSOLEIL W ,  KEEFE G

IPC: G11C11/14 ,  G01R33/09 ,  G11C19/08

CPC classification number: G11C19/0866 ,  G01R33/09

Abstract: A plurality of magneto-resistive sensing elements are connected in series and positioned adjacent magnetic bubble domain propagation paths in a compressor circuit. If a data representing bubble is injected into the beginning of the circuit, each bubble already present is forced over to the next idler position. As the bubbles pass the sensing elements their magnetization vectors are rotated producing corresponding changes in the resistance values of the sensors, which may be easily detected as a large magnitude signal indicating the presence of a data bubble.

Abstract translation: 多个磁阻感测元件串联连接并定位在压缩机电路中的与气泡扩散路径相邻的位置。 如果将表示气泡的数据注入到电路的开始处，则已经存在的每个气泡被迫过渡到下一个惰轮位置。 当气泡通过感测元件时，它们的磁化矢量被旋转，从而产生传感器的电阻值的相应变化，这可以容易地被检测为指示数据气泡存在的大幅度信号。

公开(公告)号：SE333021B

公开(公告)日：1971-03-01

申请号：SE693766

申请日：1966-05-18

Applicant: IBM

Inventor： FANG F ,  WALKER E ,  YU H

IPC: H01L27/088 ,  H01L21/00 ,  H01L21/22 ,  H01L21/316 ,  H01L21/8234 ,  H01L21/8236 ,  H01L29/00 ,  H01L29/78 ,  H01L11/14

Abstract: A method for manufacturing a field-effect, isolated-barrier transistor, comprising the steps of: forming by diffusion separate parts, of a first type of conductivity, on the surface of an elementary semiconductor wafer of the opposite conductivity type; forming an insulating layer at least in the intermediate part of said surface lying between said diffused portions separated and defining a conduit channel therebetween, having a given surface potential the interfacial zone between said insulating layer and said intermediate portion of said surface. said wafer; and forming on said insulating layer a barrier electrode for applying electric fields to said intermediate surface portion; method characterized by the improvement comprising the step of passing through diffusion an impurity material of the acceptor type, through said insulating layer and until penetrating a narrow layer of said intermediate surface part before forming said barrier electrode, for control the surface potential in said interfacial zone. (Machine-translation by Google Translate, not legally binding)