Abstract:
A computer memory, most particularly a monolithic memory, may be constructed of components which contain defective bit cells. During the production process, the monolithic chips are sorted into groups in accordance with the chip sector which contains one or more defective cells. The chips are then mounted on memory cards, with all of the chips having a defect in a given chip sector being mounted on a corresponding card sector. The cards, each of which is produced in a substantially identical manner, are then assembled into a complete memory. The address wiring of the memory is provided in such a manner as to ensure that no given memory word, or defined group of bits within a memory word, contains within it more than one memory cell that is known or suspected to be defective. Means are also provided for deriving from the address of any given memory word the bit location within said word of a defective or suspicious bit. In one embodiment shown herein, the suspect bit is bypassed in favor of a redundant bit provided within the memory system. In another embodiment described herein, the suspect bit is utilized just as if it were a good bit, but, upon detection of an error, the suspect bit will be presumed to be in error.
Abstract:
In the production of monolithic memory chips used in computer storage devices a certain percentage is rejected in production as containing one or more defective bit cells on the chip. These almost perfect chips are arranged on a memory card bit so that all of the bit cards of a particular memory product are identical to those sections containing defective bit cells. The valid cells are logically arranged in contiguous address locations by translation logic which converts the address before it is presented to the memory bit cards. Addresses presented to the logic are re-ordered such that all addresses that, untranslated, would have selected a defective area of a chip, after being translated select a non-defective area of a chip.
Abstract:
The specification describes charge coupled devices in a bidirectional shift register and having a dynamic ordering capability. Charge coupled devices are shown in a semiconductor structure with FET amplifying circuits, uniquely adapted for bidirectional operation by means of a circuit which changes the order of occurrence of the clocking pulses. The density of charge coupled devices is preserved together with improved access time resulting from bidirectional operation and dynamic ordering.
Abstract:
A binary data storage system of a data processing system is comprised of electrically independent storage modules, each module comprised of a matrix of electrically independent storage devices, with each storage device being an integral circuit element comprised of a first matrix of binary storage cells and associated selection circuitry, and a second matrix of binary storage cells and associated selection circuitry. The design of the binary storage cell of the first matrix and associated selection circuitry is such that a large number of storage cells can occupy a unit space but provide relatively slow access to the binary data manifested by the cell. The second matrix of binary storage cells and associated selection circuitry is formed in such a way that a relatively small number of storage cells are provided with a relatively high speed of access to the binary data manifested in the storage cells. Each storage device has a single terminal for the transfer of a single binary bit to or from the storage device. Each of the previously mentioned storage modules also has a single terminal for the transfer of a single binary bit to or from the storage module. All of the terminals of the storage devices are connected in common to the terminal of a storage module. One storage module is provided for each binary bit of a data processing system binary data word to be transferred between the storage system and the central processing unit of the data processing system. The most recently accessed binary data will be manifested in the high speed storage cells of the second matrix such that when address information is sent to the storage system, a large percentage of the requests for access to the storage system will find the data in the high speed portion of each of the storage devices providing an effective access time to the data in the storage system significantly faster than if the access to the data were required to be made to the storage cells of the first matrix.
Abstract:
A high-speed column locate feature whereby a keypunch operator may select at random any predetermined column location on a unit record card and control the card punching to either automatically duplicate or skip at high speed to the selected column. A prepunched program card is provided in conjunction with auxiliary column-select keys. The program card has pre-punched coded patterns which are selectable by the column-select keys. By the appropriate choice of column-select keys and the wiring of the keys, a field definition is impressed upon keypunch field definition logic. When the SKIP or DUP control key is depressed, the card being fed automatically feeds the length of the field defined by the field impressed upon the field definition logic.
Abstract:
Transformation logic is provided in the addressing portion of a computer memory to permit the memory to be constructed of components containing defective bit cells. In the production of monolithic memory chips used in computer storage devices, a certain percentage is rejected in production as containing one or more defective bit cells on the chip. This apparatus arranges the almost perfect chips on a memory bit card so that all of the bit cards of a particular memory product are identical as to those sections containing defective bit cells. The valid cells are logically arranged in contiguous address locations by transformation logic which converts the address before it is presented to the memory bit cards. This circuitry places the defective bit positions in high order address locations which are not accessed.
Abstract:
A plurality of magneto-resistive sensing elements are connected in series and positioned adjacent magnetic bubble domain propagation paths in a compressor circuit. If a data representing bubble is injected into the beginning of the circuit, each bubble already present is forced over to the next idler position. As the bubbles pass the sensing elements their magnetization vectors are rotated producing corresponding changes in the resistance values of the sensors, which may be easily detected as a large magnitude signal indicating the presence of a data bubble.
Abstract:
A monolithic computer memory constructed of monolithic chips which contain defective bit cells. During the production process, the chips are sorted into groups in accordance with the chip sector or quadrant which contains one or more defective cells. The chips are then mounted on modules and the modules are placed on memory cards, with all of the chips having a defect in a given chip sector being mounted in a corresponding card sector. The cards, each of which is produced in a substantially identical manner, are then assembled into a complete memory. The valid cells are logically arranged in contiguous address locations by transformation logic which converts the address before it is presented to the memory bit cards. Addresses presented to the logic are re-ordered such that all addresses that, untranslated, would have selected a defective area of a chip, after being translated select a non-defective area of a chip.
Abstract:
A data storage unit in which words of data including the word addresses are stored in groups of shiftable matrices, the groups of matrices being operable on a signal requesting access to repetitively shift their contents to other matrix positions in various loops, some of which include a position from which a word may be accessed and some of which exclude the access position. The bits in a data word are distributed among groups of matrices, each group generally containing only one bit of a given word. Each group is logically divided into a plurality of sectors, with each sector containing bits from several words. Controls are provided for varying the shifting in the various loops such that the positions of some or all of the sectors are dynamically reordered so that the proximity of each of the sectors to the access position is approximately or exactly the order in which the sectors were last requested, and so that the word bits within the sectors are also positioned so that their proximity to the access position is approximately or exactly the order in which they were last requested, thus reducing average access time in programs involving considerable repeated reference to a limited group of sectors and/or words in the memory, and substantially reducing worst-case access time for all situations.