公开(公告)号：WO2012055749A3

公开(公告)日：2012-12-06

申请号：PCT/EP2011068315

申请日：2011-10-20

Applicant: IBM ,  IBM UK ,  WANG KEJIA ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK

Inventor： WANG KEJIA ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L31/0326 ,  H01L31/022483 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: A method of fabricating a solar cell e.g. CuZnSn(S,Se) (CZTSSe), that includes the following steps. A substrate is coated with a molybdenum (Mo) layer. A stress-relief layer is deposited on the Mo layer. The stress-relief layer is coated with a diffusion barrier. Absorber layer constituent components are deposited on the diffusion barrier, wherein the constituent components comprise one or more of sulfur (S) and selenium (Se). The constituent components are annealed to form an absorber layer, wherein the stress-relief layer relieves thermal stress imposed on the absorber layer, and wherein the diffusion barrier blocks diffusion of the one or more of S and Se into the Mo layer. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

Abstract translation: 一种制造太阳能电池的方法，例如 CuZnSn（S，Se）（CZTSSe），其包括以下步骤。 衬底涂有钼（Mo）层。 应力消除层沉积在Mo层上。 应力消除层涂覆有扩散阻挡层。 吸收剂层组成成分沉积在扩散阻挡层上，其中构成组分包含硫（S）和硒（Se）中的一种或多种。 所述构成部件进行退火以形成吸收层，其中所述应力消除层减轻施加在所述吸收体层上的热应力，并且其中所述扩散阻挡层将所述S和Se中的一种或多种的扩散阻挡在所述Mo层中。 在吸收层上形成缓冲层。 在缓冲层上形成透明导电电极。

公开(公告)号：WO2012055737A3

公开(公告)日：2012-12-27

申请号：PCT/EP2011068254

申请日：2011-10-19

Applicant: IBM ,  IBM UK ,  WANG KEJIA ,  SUPRATIK GUHA

Inventor： WANG KEJIA ,  SUPRATIK GUHA

IPC: H01L31/18

CPC classification number: H01L31/072 ,  H01L21/02422 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02557 ,  H01L21/02568 ,  H01L21/02628 ,  H01L21/02631 ,  H01L31/0326 ,  Y02E10/50

Abstract: A Kesterite film is vacuum deposited and annealed on a substrate. Deposition is conducted at low temperature to provide good composition control and efficient use of metals. Annealing is conducted at a high temperature for a short period of time. Thermal evaporation, E-beam evaporation or sputtering in a high vacuum environment may be employed as part of a deposition process.

Abstract translation: 在台面上真空沉积和退火Kesterite膜。 沉积在低温下进行以提供良好的组成控制和金属的有效使用。 退火在高温下进行很短的时间。 在高真空环境中的热蒸发，电子束蒸发或溅射可以用作沉积工艺的一部分。

公开(公告)号：WO2012055738A2

公开(公告)日：2012-05-03

申请号：PCT/EP2011068256

申请日：2011-10-19

Applicant: IBM ,  IBM UK ,  WANG KEJIA ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK

Inventor： WANG KEJIA ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK

IPC: H01L31/18

CPC classification number: H01L31/0326 ,  H01L31/072 ,  Y02E10/50

Abstract: A method of fabricating a thin film solar cell includes the following steps. A molybdenum (Mo)-coated substrate is provided. Absorber layer constituent components, two of which are sulfur (S) and selenium (Se), are deposited on the Mo-coated substrate. The S and Se are deposited on the Mo-coated substrate using thermal evaporation in a vapor chamber. Controlled amounts of the S and Se are introduced into the vapor chamber to regulate a ratio of the S and Se provided for deposition. The constituent components are annealed to form an absorber layer on the Mo-coated substrate. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

Abstract translation: 制造薄膜太阳能电池的方法包括以下步骤。 提供了钼（Mo）涂覆的基材。 其中两个是硫（S）和硒（Se）的吸收剂层组成成分沉积在Mo涂覆的基底上。 使用蒸发室中的热蒸发将S和Se沉积在Mo涂覆的基底上。 将S和Se的控制量引入蒸气室以调节用于沉积的S和Se的比例。 将这些构成组分退火以在Mo涂覆的基底上形成吸收层。 在吸收层上形成缓冲层。 在缓冲层上形成透明导电电极。

公开(公告)号：DE112011102890T5

公开(公告)日：2013-06-06

申请号：DE112011102890

申请日：2011-10-19

Applicant: IBM

Inventor： SUPRATIK GUHA ,  WANG KEJIA

IPC: H01L31/18

Abstract: Eine Kesteritschicht wird auf ein Substrat vakuumabgeschieden und geglüht. Die Abscheidung wird bei einer niedrigen Temperatur durchgeführt, um eine gute Steuerung der Zusammensetzung und eine effiziente Metallausnutzung zu gewährleisten. Das Glühen wird eine kurze Zeit lang bei einer hohen Temperatur durchgeführt. Wärmeverdampfung, Elektronenstrahlverdampfung oder Zerstäubung können als Teil eines Abscheidungsprozesses in einer Hochvakuumumgebung verwendet werden.

公开(公告)号：GB2497909A

公开(公告)日：2013-06-26

申请号：GB201307919

申请日：2011-10-20

Applicant: IBM

Inventor： SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK ,  WANG KEJIA

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/032

Abstract: A method of fabricating a solar cell e.g. CuZnSn(S,Se) (CZTSSe), that includes the following steps. A substrate is coated with a molybdenum (Mo) layer. A stress-relief layer is deposited on the Mo layer. The stress-relief layer is coated with a diffusion barrier. Absorber layer constituent components are deposited on the diffusion barrier, wherein the constituent components comprise one or more of sulfur (S) and selenium (Se). The constituent components are annealed to form an absorber layer, wherein the stress-relief layer relieves thermal stress imposed on the absorber layer, and wherein the diffusion barrier blocks diffusion of the one or more of S and Se into the Mo layer. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

公开(公告)号：GB2497909B

公开(公告)日：2014-04-16

申请号：GB201307919

申请日：2011-10-20

Applicant: IBM

Inventor： SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK ,  WANG KEJIA

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/032

Abstract: Techniques for fabricating thin film solar cells, such as CuZnSn(S,Se) (CZTSSe) solar cells are provided. In one aspect, a method of fabricating a solar cell is provided that includes the following steps. A substrate is provided. The substrate is coated with a molybdenum (Mo) layer. A stress-relief layer is deposited on the Mo layer. The stress-relief layer is coated with a diffusion barrier. Absorber layer constituent components are deposited on the diffusion barrier, wherein the constituent components comprise one or more of sulfur (S) and selenium (Se). The constituent components are annealed to form an absorber layer, wherein the stress-relief layer relieves thermal stress imposed on the absorber layer, and wherein the diffusion barrier blocks diffusion of the one or more of S and Se into the Mo layer. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

公开(公告)号：DE112011102949T5

公开(公告)日：2013-06-20

申请号：DE112011102949

申请日：2011-10-20

Applicant: IBM

Inventor： WANG KEJIA ,  GUHA SUPRATIK ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/032

Abstract: Ein Verfahren zum Fertigen einer Solarzelle, z. B. CuZnSn(S,Se)(CZTSSe), das die folgenden Schritte beinhaltet. Ein Substrat wird mit einer Molybdän(Mo)-Schicht beschichtet. Eine Spannungsentlastungsschicht wird auf die Mo-Schicht aufgebracht. Die Spannungsentlastungsschicht wird mit einer Diffusionssperre beschichtet. Bestandteile der Absorberschicht werden auf die Diffusionssperre aufgebracht, wobei die Bestandteile Schwefel (S) und/oder Selen (Se) aufweisen. Die Bestandteile werden wärmebehandelt, um eine Absorberschicht auszubilden, wobei die Spannungsentlastungsschicht thermische Spannungen abbaut, die in die Absorberschicht eingebracht werden, und wobei die Diffusionssperre die Diffusion von S und/oder Se in die Mo-Schicht blockiert. Eine Pufferschicht wird auf der Absorberschicht ausgebildet. Eine transparente leitfähige Elektrode wird auf der Pufferschicht ausgebildet.