公开(公告)号：EP1974372A4

公开(公告)日：2009-12-09

申请号：EP07716303

申请日：2007-01-03

Applicant: IBM

Inventor： CHUDZIK MICHAEL P ,  DORIS BRUCE B ,  GUHA SUPRATIK ,  JAMMY RAJARAO ,  NARAYANAN VIJAY ,  PARUCHURI VAMSI K ,  WANG YUN Y ,  KWONG HON WONG KEITH

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/517 ,  H01L21/28088 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1766691A4

公开(公告)日：2011-06-29

申请号：EP05732384

申请日：2005-03-30

Applicant: IBM

Inventor： BOJARCZUK NESTOR A JR ,  CABRAL CYRIL JR ,  CARTIER EDUARD A ,  COPEL MATTHEW W ,  FRANK MARTIN M ,  GOUSEV EVGENI P ,  GUHA SUPRATIK ,  JAMMY RAJARAO ,  NARAYANAN VIJAY ,  PARUCHURI VAMSI K

IPC: H01L31/113 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L31/119

CPC classification number: H01L29/513 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/517

公开(公告)号：WO2012055749A3

公开(公告)日：2012-12-06

申请号：PCT/EP2011068315

申请日：2011-10-20

Applicant: IBM ,  IBM UK ,  WANG KEJIA ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK

Inventor： WANG KEJIA ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/032

CPC classification number: H01L31/0326 ,  H01L31/022483 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: A method of fabricating a solar cell e.g. CuZnSn(S,Se) (CZTSSe), that includes the following steps. A substrate is coated with a molybdenum (Mo) layer. A stress-relief layer is deposited on the Mo layer. The stress-relief layer is coated with a diffusion barrier. Absorber layer constituent components are deposited on the diffusion barrier, wherein the constituent components comprise one or more of sulfur (S) and selenium (Se). The constituent components are annealed to form an absorber layer, wherein the stress-relief layer relieves thermal stress imposed on the absorber layer, and wherein the diffusion barrier blocks diffusion of the one or more of S and Se into the Mo layer. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

Abstract translation: 一种制造太阳能电池的方法，例如 CuZnSn（S，Se）（CZTSSe），其包括以下步骤。 衬底涂有钼（Mo）层。 应力消除层沉积在Mo层上。 应力消除层涂覆有扩散阻挡层。 吸收剂层组成成分沉积在扩散阻挡层上，其中构成组分包含硫（S）和硒（Se）中的一种或多种。 所述构成部件进行退火以形成吸收层，其中所述应力消除层减轻施加在所述吸收体层上的热应力，并且其中所述扩散阻挡层将所述S和Se中的一种或多种的扩散阻挡在所述Mo层中。 在吸收层上形成缓冲层。 在缓冲层上形成透明导电电极。

公开(公告)号：WO2011061011A3

公开(公告)日：2012-02-02

申请号：PCT/EP2010065240

申请日：2010-10-12

Applicant: IBM ,  IBM UK ,  GUNAWAN OKI ,  GUHA SUPRATIK

Inventor： GUNAWAN OKI ,  GUHA SUPRATIK

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022433 ,  Y02E10/50

Abstract: A photovoltaic cell and a method of forming an electrode grid on a photovoltaic semiconductor substrate of a photovoltaic cell are disclosed. In one embodiment, the photovoltaic cell comprises a photovoltaic semiconductor substrate; a back electrode electrically connected to a back surface of the substrate; and a front electrode electrically connected to a front surface of the substrate. The substrate, back electrode, and front electrode form an electric circuit for generating an electric current when said substrate absorbs light. The front electrode is comprised of a metal grid defining a multitude of holes. These holes may be periodic, aperiodic, or partially periodic. The front electrode may be formed by depositing nanospheres on the substrate; forming a metallic layer on the substrate, around the nanospheres; and removing the nanospheres, leaving an electrode grid defining a multitude of holes on the substrate.

Abstract translation: 公开了一种光伏电池和在光伏电池的光电半导体衬底上形成电极栅格的方法。 在一个实施例中，光伏电池包括光电半导体衬底; 电连接到所述基板的背面的背面电极; 以及电连接到所述基板的前表面的前电极。 当基板吸收光时，基板，背面电极和正面电极形成用于产生电流的电路。 前电极由限定多个孔的金属网格组成。 这些孔可以是周期性的，非周期性的或部分周期性的。 前电极可以通过在衬底上沉积纳米球而形成; 在纳米球周围在基底上形成金属层; 并去除纳米球，留下在基底上限定多个孔的电极网格。

公开(公告)号：WO2011012382A2

公开(公告)日：2011-02-03

申请号：PCT/EP2010059058

申请日：2010-06-25

Applicant: IBM ,  IBM UK ,  GUHA SUPRATIK ,  HOVEL HAROLD

Inventor： GUHA SUPRATIK ,  HOVEL HAROLD

IPC: H01L31/068

CPC classification number: H01L21/02642 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02647 ,  H01L21/02667 ,  H01L31/0687 ,  H01L31/1852 ,  H01L31/1872 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: A multi-junction photovoltaic device includes a silicon substrate and a dielectric layer formed on the silicon substrate. A germanium layer is formed on the dielectric layer. The germanium includes a crystalline structure that is substantially similar to the crystalline structure of the silicon substrate. A first photovoltaic sub-cell includes a first plurality of doped semiconductor layers formed on the germanium layer. At least a second photovoltaic sub-cell includes a second plurality of doped semiconductor layers formed on the first photovoltaic sub-cell that is on the germanium layer that is on the dielectric layer.

Abstract translation: 多结光伏器件包括硅衬底和形成在硅衬底上的电介质层。 在电介质层上形成锗层。 锗包括基本上类似于硅衬底的晶体结构的晶体结构。 第一光伏子电池包括形成在锗层上的第一多个掺杂半导体层。 至少第二光伏子电池包括形成在位于电介质层上的锗层上的第一光伏子电池上的第二多个掺杂半导体层。

公开(公告)号：EP1839468A4

公开(公告)日：2011-06-08

申请号：EP05810237

申请日：2005-10-19

Applicant: IBM

Inventor： GELORME JEFFREY D ,  GUHA SUPRATIK ,  LABIANCA NANCY C ,  MARTIN YVES ,  VAN KESSEL THEODORE G

IPC: H05K7/20

CPC classification number: H01L23/3733 ,  H01L23/4093 ,  H01L23/42 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1825521A4

公开(公告)日：2008-10-01

申请号：EP05820881

申请日：2005-11-01

Applicant: IBM

Inventor： BOJARCZUK NESTOR A JR ,  CABRAL CYRIL JR ,  CARTIER EDUARD A ,  FRANK MARTIN M ,  GOUSEV EVGENI P ,  GUHA SUPRATIK ,  JAMISON PAUL C ,  JAMMY RAJARAO ,  NARAYANAN VIJAY ,  PARUCHURI VAMSI K

IPC: H01L29/792 ,  H01L21/336 ,  H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC classification number: H01L29/513 ,  H01L21/28194 ,  H01L21/2822 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/518

Abstract: A semiconductor structure is provided that includes a V t stabilization layer between a gate dielectric and a gate electrode. The V t stabilization layer is capable of stabilizing the structure's threshold voltage and flatband voltage to a targeted value and comprises a nitrided metal oxide, or a nitrogen-free metal oxide, with the provision that when the V t stabilization layer comprises a nitrogen-free metal oxide, at least one of the semiconductor substrate or the gate dielectric includes nitrogen. The present invention also provides a method of fabricating such a structure.

公开(公告)号：JPH10223377A

公开(公告)日：1998-08-21

申请号：JP1932398

申请日：1998-01-30

Applicant: IBM

Inventor： GUHA SUPRATIK ,  HAIGHT RICHARD ALAN ,  KARASINSKI JOSEPH M ,  TROUTMAN RONALD R

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22 ,  H05B33/26

Abstract: PROBLEM TO BE SOLVED: To provide an organic light emitting diode having a transparent cathode structure. SOLUTION: This structure has a metal thin film 64 having a low work function, and this metal thin film 64 is brought into direct contact with an electron transport layer 62 and is covered with a layer 66 of a broad band gap semiconductor. Since calcium has relatively high optical energy transmittance, and has the ability to form an electron injection contact having excellent properties for an organic substance, the metal forming the metal thin film 64 is preferably made of calcium. In addition, ZnSe, ZnS or their alloys exhibit excellent conductivity in a direction parallel to emission light, and has the ability to protect a low work function metal and an organic film in a lower layer, and is transparent for the emission light. Therefore, a semiconductor forming the semiconductor layer 66 is preferably selected from a group consisting of ZnSe, ZnS or their alloys.

公开(公告)号：JPH11120615A

公开(公告)日：1999-04-30

申请号：JP17430998

申请日：1998-06-22

Applicant: IBM

Inventor： BOJARCZUK JR NESTOR ALEXANDER ,  GUHA SUPRATIK ,  GUPTA ARUNAVA ,  TANG WADE WAI-CHUNG

IPC: B41M5/26 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253

Abstract: PROBLEM TO BE SOLVED: To provide a phase transition medium for optical recording by preparing a metal compsn. selected from group III metals for a metal nitride thin film. SOLUTION: This phase transition type medium for optical recording is based on a semiconductor comprising group III metal nitrides such as AlN, InN and GaN. By irradiating the surface of this thin film of a semiconductor having a wide band gap with photons of energy equal to or higher than the band gap of the material with higher output density than the threshold, nitrogen is desorbed to form a metal coating. Once nitrogen is desorbed, the metal phase written on the medium can not return to a nitride phase, and this stabilizes the medium as a write-once system. The band gap when a group III metal nitride alloy is used is continuously varied and controlled by changing the relative ratio of III group metals so that the alloy melts by laser having the photon energy laser in the above range. Thus, the material can be used for the format of plural recording layers with low absorbance and high transmittance when proper recording wavelength is used for the initial phase.

公开(公告)号：WO2012055738A2

公开(公告)日：2012-05-03

申请号：PCT/EP2011068256

申请日：2011-10-19

Applicant: IBM ,  IBM UK ,  WANG KEJIA ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK

Inventor： WANG KEJIA ,  SHIN BYUNGHA ,  BOJARCZUK NESTOR ,  GUHA SUPRATIK

IPC: H01L31/18

CPC classification number: H01L31/0326 ,  H01L31/072 ,  Y02E10/50

Abstract: A method of fabricating a thin film solar cell includes the following steps. A molybdenum (Mo)-coated substrate is provided. Absorber layer constituent components, two of which are sulfur (S) and selenium (Se), are deposited on the Mo-coated substrate. The S and Se are deposited on the Mo-coated substrate using thermal evaporation in a vapor chamber. Controlled amounts of the S and Se are introduced into the vapor chamber to regulate a ratio of the S and Se provided for deposition. The constituent components are annealed to form an absorber layer on the Mo-coated substrate. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

Abstract translation: 制造薄膜太阳能电池的方法包括以下步骤。 提供了钼（Mo）涂覆的基材。 其中两个是硫（S）和硒（Se）的吸收剂层组成成分沉积在Mo涂覆的基底上。 使用蒸发室中的热蒸发将S和Se沉积在Mo涂覆的基底上。 将S和Se的控制量引入蒸气室以调节用于沉积的S和Se的比例。 将这些构成组分退火以在Mo涂覆的基底上形成吸收层。 在吸收层上形成缓冲层。 在缓冲层上形成透明导电电极。