公开(公告)号：JP2001298037A

公开(公告)日：2001-10-26

申请号：JP2001073057

申请日：2001-03-14

Applicant: IBM

Inventor： WAYNE J HOWELL ,  RONALD L MENDELSON ,  WILLIAM T MOTOSUIFU

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485

Abstract: PROBLEM TO BE SOLVED: To provide a structure and method that forms mechanically and electrically firm interconnection between the copper wiring of an integrated circuit and a solder ball without diffusing tin or lead from the solder ball to final copper wiring. SOLUTION: This structure (and method) for metallurgy structure is equipped with a passivation layer, a via that passes through the passivation layer to extend to a metal line in the metallurgy structure, a barrier layer that allows the via to be subjected to lining, a metal plug that is the metal plug in the via on the barrier layer while the metal plug and the metal wire contain the same material, and a solder bump that is formed on the metal plug.

公开(公告)号：JP2000260804A

公开(公告)日：2000-09-22

申请号：JP2000049474

申请日：2000-02-25

Applicant: IBM

Inventor： FERENCE THOMAS G ,  WAYNE J HOWELL

IPC: H05K3/34 ,  H01L21/60 ,  H01L21/98

Abstract: PROBLEM TO BE SOLVED: To surely form very small interconnections between two boards. SOLUTION: This semiconductor structure has a first board 106 and a second board 108 bonded to the first board 106. A plurality of contacts 110, 112 are extended between the first and second boards 106, 108. A plurality of first solder bumps 114, 116 are connected between the first and second boards 106, 108 for positioning the contacts 110 to the contact pads 112.