公开(公告)号：JPH113965A

公开(公告)日：1999-01-06

申请号：JP10935898

申请日：1998-04-20

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  FERENCE THOMAS G ,  HOLMES STEVEN J

IPC: H01L23/52 ,  H01L23/48 ,  H01L25/065

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device in which a wire lead is not covered and a chip access face is insulated. SOLUTION: The semiconductor device has a conductive lead 25 which is positioned inside of a first insulating material 22 and a tip end of which is exposed. In this case, the first insulating material 22 is alternately provided between first and second insulated integrated circuit chips 10 and 16. The first insulating material 22 is etched to form a recess therein and thereafter, a second insulating material 34 is provided on an access face 30 of the first and second chips 10 and 16 and on an inside face of the recess. Next a tip end 25 of the wire lead is exposed by chemical-mechanical polishing or by a wet-etching/ developing process.

公开(公告)号：JP2000260804A

公开(公告)日：2000-09-22

申请号：JP2000049474

申请日：2000-02-25

Applicant: IBM

Inventor： FERENCE THOMAS G ,  WAYNE J HOWELL

IPC: H05K3/34 ,  H01L21/60 ,  H01L21/98

Abstract: PROBLEM TO BE SOLVED: To surely form very small interconnections between two boards. SOLUTION: This semiconductor structure has a first board 106 and a second board 108 bonded to the first board 106. A plurality of contacts 110, 112 are extended between the first and second boards 106, 108. A plurality of first solder bumps 114, 116 are connected between the first and second boards 106, 108 for positioning the contacts 110 to the contact pads 112.

公开(公告)号：JPH1187712A

公开(公告)日：1999-03-30

申请号：JP19272598

申请日：1998-07-08

Applicant: IBM

Inventor： CLARK WILLIAM F ,  FERENCE THOMAS G ,  HOOK TERENCE B ,  MARTIN DALE W

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/30 ,  H01L21/316 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To ensure strong resistance against hot electron effect on the interface of silicon/silicon dioxide while suppressing damage of an element by substituting deuterium for hydrogen of a film formation reactive substance being used in production of semiconductor thereby producing a deuterium film substance at the time of film formation. SOLUTION: A MOSFET element 100 comprises a single crystal silicon substrate 11, source-drain regions 12, 13, a gate oxide 14, a gate polysilicon 15, a gate sidewall spacer 16, a silicon nitride barrier wall 18, a passive oxide layer (e.g. SiO2 ) to be bonded, and a self-aligned silicate layer 17. These components of gate oxide 14, polysilicon 15, or the like, in the element contain hydrogen molecules emitted into the oxide during annealing process. The hydrogen atom is substituted by deuterium at the time of film formation to produce a deuterium film substance. Hydrogen migrates to the interface of silicon/silicon dioxide of these component of element to produce a deuterium substance thus exhibiting resistance against heat cycle.

公开(公告)号：SG74635A1

公开(公告)日：2000-08-22

申请号：SG1998001415

申请日：1998-06-15

Applicant: IBM

Inventor： CLARK WILLIAM F ,  FERENCE THOMAS G ,  HOOK TERENCE B ,  MARTIN DALE W

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/78 ,  H01L21/30 ,  H01L21/316 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336 ,  H01L21/306

Abstract: Method of forming a film for a semiconductor device in which a source material comprising a deuterated species is provided during formation of the film.

公开(公告)号：MY115263A

公开(公告)日：2003-04-30

申请号：MYPI9802513

申请日：1998-06-05

Applicant: IBM

Inventor： CLARK WILLIAM F ,  FERENCE THOMAS G ,  HOOK TERENCE B ,  MARTIN DALE W

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/78 ,  H01L21/285 ,  H01L21/30 ,  H01L21/316 ,  H01L21/318 ,  H01L21/324

Abstract: METHOD OF FORMING A FILM (14, 15, 16, 18, 19; 24, 25, 26, 28, 29; 34, 35,36, 38A, 38B, 39) FOR A SEMICONDUCTOR DEVICE (100, 200, 300) IN WHICH A SOURCE MATERIAL COMPRISING A DEUTERATES SPECIES IS PROVIDED DURING FORMATION OF THE FILM.