公开(公告)号：JPH11354630A

公开(公告)日：1999-12-24

申请号：JP13216799

申请日：1999-05-13

Applicant: IBM

Inventor： WEINI W ADKISON ,  JEROME P RASKEY ,  PAUL W PASTELL ,  JEDD H RANKIN

IPC: H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To decide a diffusion area, by containing the constitution of the frames of a plurality of shallow trenches, and forming the frames around prescribed diffusion or active semiconductor areas for finally sealing active and passive semiconductor devices. SOLUTION: The frame 30a of a shallow trench is formed around a first active semiconductor area 40a by using phase edge lithography, and the second frame 30 of the shallow trench is formed around a second active semiconductor area 40b. Additional trench frames 30c and 30d are formed around the active semiconductor areas 40c and 40d. The constitution of the frames 30a-30d of a plurality of shallow trenches are contained and the respective frames 30a-30d are formed around the prescribed silicon diffusion areas or the active semiconductor areas 40a-40d. Thus, the diffusion area can be decided.