公开(公告)号：JPH1174196A

公开(公告)日：1999-03-16

申请号：JP19275998

申请日：1998-07-08

Applicant: IBM

Inventor： JEFFREY S BROWN ,  JAMES S DUNE ,  STEPHEN J HORMES ,  KAKU K HYUIN ,  LEIDY ROBERT K ,  PAUL W PASTELL

IPC: H01L29/78 ,  G03F7/095 ,  G03F7/38 ,  H01L21/027 ,  H01L21/265 ,  H01L21/311 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To enable junctions of a gate/source and a gate/drain to be enhanced in control in doping by a method, wherein a side wall spacer trough is demarcated by the use of a hybrid resist. SOLUTION: A wafer is prepared, and a hybrid resist layer is attached to the wafer, exposed to light through a mask, and developed (302 to 308) for the formation of a sidewall spacer. A hard mask is etched through a spacer (301), a uniform exposure process and a development process are carried out (312), a gate matter is etched through the residual hard mask (314), and a sidewall spacer trough is formed. Then, the exposed hard mask and a negative-type hybrid resist are removed (316 and 313), and a gate edge implant is formed (320). Then, a sidewall oxide and a nitride stopper are attached (322), an excess sidewall spacer matter and an excess gate matter are removed (326 and 328), and are injected (330) to a source and a drain region.

公开(公告)号：JPH11354630A

公开(公告)日：1999-12-24

申请号：JP13216799

申请日：1999-05-13

Applicant: IBM

Inventor： WEINI W ADKISON ,  JEROME P RASKEY ,  PAUL W PASTELL ,  JEDD H RANKIN

IPC: H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To decide a diffusion area, by containing the constitution of the frames of a plurality of shallow trenches, and forming the frames around prescribed diffusion or active semiconductor areas for finally sealing active and passive semiconductor devices. SOLUTION: The frame 30a of a shallow trench is formed around a first active semiconductor area 40a by using phase edge lithography, and the second frame 30 of the shallow trench is formed around a second active semiconductor area 40b. Additional trench frames 30c and 30d are formed around the active semiconductor areas 40c and 40d. The constitution of the frames 30a-30d of a plurality of shallow trenches are contained and the respective frames 30a-30d are formed around the prescribed silicon diffusion areas or the active semiconductor areas 40a-40d. Thus, the diffusion area can be decided.