公开(公告)号：JPH10321858A

公开(公告)日：1998-12-04

申请号：JP8967598

申请日：1998-04-02

Applicant: IBM

Inventor： WILLIAM F CLARK ,  JEFFREY B JOHNSON

IPC: H01L29/78 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To reduce the size of a field effect transistor integrated circuit without deteriorating the performances of transistors by providing a shallow source/drain area in which junctions are formed in the direction of a current and an inclined junction area below the source/drain area. SOLUTION: It is preferable to form a source/drain structure of a shallow injection area 11 in which a junction 18 and 18' is formed by self-aligning a gate oxide 12, gate polysilicon 14, and a spacer 16 in a substrate or a device well 10. When the horizontal part 18' of the junction is inclined, the net impurity concentration does not show any abrupt change of the net impurity concentration under the junction and, when halo injection is performed, the excessive net impurity concentration caused by the halo injection below the junction largely decreases and becomes more resemble to the net impurity concentration change 26'. Therefore, the junction capacitance can be reduced without giving any serious influence to the Vt and Ioff characteristics of transistor design.