公开(公告)号：JPH11121732A

公开(公告)日：1999-04-30

申请号：JP23408898

申请日：1998-08-20

Applicant: IBM

Inventor： HOOK TERENCE B ,  JEFFREY B JOHNSON ,  HON-SAM P WON C GREATBRITAIN

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/10 ,  H01L31/14

Abstract: PROBLEM TO BE SOLVED: To provide an active picture element cell element for video imaging, wherein the size of a picture element cell is reduced. SOLUTION: A complementary active picture element sensor cell 20 and the method for forming and using the cell are provided. The complementary active picture element sensor cell 20 approximately doubles the effective signal for the specified optimum quantum. This element 20 uses the holes generated by collided photons in the complementary active picture element sensor cell 20. Two active picture element sensor cell circuits, that is to say, an NFET circuit and a complementary PFET circuit are formed and used together with a photodiode 22. The NFET circuit captures electron current. The PFET circuit captures hole current. The sum of the current is about twice the current in the case of the conventional active picture element sensor circuit using the region of the photodiode of the similar size.

公开(公告)号：JP2013048274A

公开(公告)日：2013-03-07

申请号：JP2012233911

申请日：2012-10-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation

Inventor： METE ERTURK ,  ROBERT A GROVES ,  JEFFREY B JOHNSON ,  ALVIN J JOSEPH ,  LIU QIZHI ,  EDMUND J SPROGIS ,  ANTHONY K STAMPER

IPC: H01L21/3205 ,  H01L21/331 ,  H01L21/768 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L23/522 ,  H01L27/06 ,  H01L29/737

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a backside contact structure and a method of fabricating the structure.SOLUTION: The method includes: forming a first dielectric layer 105 on a frontside of a substrate 100 having the frontside and an opposing backside; forming an electrically conductive first stud contact 140B in the first dielectric layer, the first stud contact extending through the first dielectric layer to the frontside of the substrate; thinning the substrate from the backside of the substrate to form a new backside of the substrate; forming a trench 165 in the substrate, the trench extending from the new backside of the substrate to the first dielectric layer, to expose a bottom surface of the first stud contact in the trench; and forming a conformal electrically conductive layer 170, 175 on the new backside of the substrate, sidewalls of the trench, exposed surfaces of the first dielectric layer and exposed surfaces of the first stud contacts, where the conductive layer is not thick enough to completely fill the trench.

Abstract translation: 要解决的问题：提供一种背面接触结构和制造该结构的方法。 解决方案：该方法包括：在具有前侧和相对的背面的基板100的前侧形成第一电介质层105; 在所述第一电介质层中形成导电的第一螺柱触头140B，所述第一螺柱触头延伸穿过所述第一电介质层到所述衬底的前侧; 从衬底的背面稀释衬底以形成衬底的新背面; 在衬底中形成沟槽165，沟槽从衬底的新背面延伸到第一介电层，以暴露沟槽中的第一柱形触头的底表面; 并且在衬底的新背面上形成共形导电层170,175，沟槽的侧壁，第一介电层的暴露表面和第一螺柱触头的暴露表面，其中导电层不够厚以至完全填充 沟渠。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JPH11121729A

公开(公告)日：1999-04-30

申请号：JP22878198

申请日：1998-08-13

Applicant: IBM

Inventor： HOOK TERENCE B ,  JEFFREY B JOHNSON ,  ROBERT LEIDY ,  HONSUN P WON

IPC: H01L27/146 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a photosensitive device of which the blue color light and red color light sensitivities are improved. SOLUTION: An active pixel sensor photosensitive device is provided with an extremely thin virtual pinning layer formed by inversing the semiconductor material on the surface of a photosensitive region. This thin pinning layer improves the blue color light response. The inverted pinning layer is preferably formed by connecting a negative potential supply to a transparent conductive layer 42 made of indium tin oxide deposited on the most part of a photosensitive region 40. The conductive layer 42 is insulated from the photosensitive region 40 by a thin insulating layer 44. The connection to the pinning layers is performed through a coupling region 50 formed in a region neither covered with the conductive layer 42 nor the insulating layer 44. In such a constitution, preferably a germanium.silicon-made strain layer 36 is formed deeply in the photosensitive layer 40 thereby enabling the red color response to be improved and decreasing the depth of the photosensitive region 40. Besides, the strain layer 36 is provided with a corrected band gap thereby increasing the absorption factor of red color light.

公开(公告)号：JP2007142417A

公开(公告)日：2007-06-07

申请号：JP2006308667

申请日：2006-11-15

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： BRYANT ANDRES ,  NOWAK EDWARD J ,  BRENT A ANDERSON ,  JEFFREY B JOHNSON

IPC: H01L21/336 ,  H01L21/283 ,  H01L29/41 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L29/42384 ,  H01L29/66795

Abstract: PROBLEM TO BE SOLVED: To provide a trigate field effect transistor provided with a fin-shaped semiconductor body with a channel region and source/drain regions on either side of the channel region. SOLUTION: Thick gate dielectric layers separate the top surface and opposing sidewalls of the channel region from the gate conductor to suppress conductivity in the channel planes. A thin gate dielectric layer separates the upper corners of the channel region from the gate dielectric to optimize conductivity in the channel corners. To further emphasize the electric current in the channel corners, the source/drain regions can be formed only in the upper corners of the semiconductor body. Alternatively, source/drain extension regions can be formed only in the upper corners of the semiconductor body adjacent to the gate conductor and deep source/drain diffusion regions can be formed in the ends of the semiconductor body. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有鳍状半导体本体的三端场效应晶体管，沟道区域和沟道区两侧的源极/漏极区域。 解决方案：厚栅极电介质层将沟道区域的顶表面和相对侧壁与栅极导体分离，以抑制沟道平面中的导电性。 薄栅极电介质层将沟道区的上角与栅极电介质分离，以优化沟道角中的导电性。 为了进一步强调通道角中的电流，源极/漏极区域只能形成在半导体本体的上角处。 或者，源极/漏极延伸区域仅可以形成在与栅极导体相邻的半导体本体的上角处，并且可以在半导体本体的端部形成深的源极/漏极扩散区域。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JPH10321858A

公开(公告)日：1998-12-04

申请号：JP8967598

申请日：1998-04-02

Applicant: IBM

Inventor： WILLIAM F CLARK ,  JEFFREY B JOHNSON

IPC: H01L29/78 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To reduce the size of a field effect transistor integrated circuit without deteriorating the performances of transistors by providing a shallow source/drain area in which junctions are formed in the direction of a current and an inclined junction area below the source/drain area. SOLUTION: It is preferable to form a source/drain structure of a shallow injection area 11 in which a junction 18 and 18' is formed by self-aligning a gate oxide 12, gate polysilicon 14, and a spacer 16 in a substrate or a device well 10. When the horizontal part 18' of the junction is inclined, the net impurity concentration does not show any abrupt change of the net impurity concentration under the junction and, when halo injection is performed, the excessive net impurity concentration caused by the halo injection below the junction largely decreases and becomes more resemble to the net impurity concentration change 26'. Therefore, the junction capacitance can be reduced without giving any serious influence to the Vt and Ioff characteristics of transistor design.

公开(公告)号：BR112012031951A2

公开(公告)日：2018-03-06

申请号：BR112012031951

申请日：2011-06-10

Applicant: IBM

Inventor： ABHISHEK DUBE ,  DAE-GYU PARK ,  JEFFREY B JOHNSON ,  JINGHONG LI ,  JUDSON R HOLT ,  KEVIN K CHAN ,  ZHENGMAO ZHU

IPC: H01L21/336 ,  H01L29/78