公开(公告)号：JPH10233421A

公开(公告)日：1998-09-02

申请号：JP1306598

申请日：1998-01-26

Applicant: IBM

Inventor： NAPHTALI E LASTIG ,  WILLIAM L GUTHRIE ,  THOMAS E SANDWICK

IPC: G01B7/06 ,  B24B37/013 ,  B24B49/04 ,  G01N27/22 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method for detecting and monitoring the thickness of a dielectric substance with accuracy and high efficiency at polishing sequence of a mechanochemical flattening process. SOLUTION: After a dielectric layer is polished with a mechanochemical polisher with polishing slurry, a device which measures in-line thickness of the dielectric layer on the surface of a work piece is released. The device for measuring in-line thickness is provided with a measuring platen 102 and a measuring electrode buried in the measuring platen. A means 120 which detects system capacitance C with an RC equivalent circuit is provided. A means 122 which converts the detected capacitance into thickness of a dielectric substance by means of correction to a specified system capacitance/optical thickness is provided. This specified correction corresponds to a BEOL(back end of line) structure at a level provided with the work piece.