公开(公告)号：JPH10233421A

公开(公告)日：1998-09-02

申请号：JP1306598

申请日：1998-01-26

Applicant: IBM

Inventor： NAPHTALI E LASTIG ,  WILLIAM L GUTHRIE ,  THOMAS E SANDWICK

IPC: G01B7/06 ,  B24B37/013 ,  B24B49/04 ,  G01N27/22 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method for detecting and monitoring the thickness of a dielectric substance with accuracy and high efficiency at polishing sequence of a mechanochemical flattening process. SOLUTION: After a dielectric layer is polished with a mechanochemical polisher with polishing slurry, a device which measures in-line thickness of the dielectric layer on the surface of a work piece is released. The device for measuring in-line thickness is provided with a measuring platen 102 and a measuring electrode buried in the measuring platen. A means 120 which detects system capacitance C with an RC equivalent circuit is provided. A means 122 which converts the detected capacitance into thickness of a dielectric substance by means of correction to a specified system capacitance/optical thickness is provided. This specified correction corresponds to a BEOL(back end of line) structure at a level provided with the work piece.

公开(公告)号：JP2001015464A

公开(公告)日：2001-01-19

申请号：JP2000131737

申请日：2000-04-28

Applicant: IBM

Inventor： WILLIAM J COLE ,  EDELSTEIN DANIEL C ,  NAPHTALI E LASTIG

IPC: B24B37/00 ,  C09C1/68 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  C23F3/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To obtain a CMP process which increases the removing speed of a liner for copper metallurgy composed of a metal having a high melting point, its alloy or compound, or both the metal and alloy or compound and, at the same time, can minimize the formation of recesses and erosion by removing the liner with slurry containing an oxidizing agent, a corrosion inhibitor, and a surface active agent. SOLUTION: The polishing speeds of a liner 20 and an insulator 10 are controlled so as to make the speeds faster than the polishing speed of copper 22. Namely, in order to make the condition for removing a Ta/TaN liner composed mainly of Ta from a semiconductor substrate which is passivated with silicon dioxide, the liner 20 is removed by CIVIP in acidic slurry containing an oxidizing agent, such as the hydrogen peroxide, a corrosion inhibitor, such as the demineralized water, BTA, etc., and a surface active agent, such as the Duponol SP, etc. Consequently, a CMP process which can increase the removing speed of the liner and, at the same time, can minimize the formation of recesses and erosion can be obtained.