公开(公告)号：JP2013201449A

公开(公告)日：2013-10-03

申请号：JP2013115224

申请日：2013-05-31

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation

Inventor： ETHAN HARRISON CANNON ,  FURUKAWA TOSHIHARU ,  JOHN GERARD GAUDIELLO ,  HACKNEY MARC CHARLES ,  STEVEN JOHN HOLMES ,  DAVID VACLAV HORAK ,  CHARLES WILLIAM KOBURGER III ,  JACK ALLAN MANDELMAN ,  WILLIAM ROBERT TONTI

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092

CPC classification number: H01L21/76264

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming a semiconductor structure.SOLUTION: The method comprises the steps of: bonding a first dielectric layer on a first semiconductor layer with a second dielectric layer on a second semiconductor layer; defining a plurality of openings extending from a top surface of the first semiconductor layer to the second semiconductor layer; applying dielectric regions to sidewalls of each of the openings; epitaxially growing an island of semiconductor material of the second semiconductor layer to fill each of the openings; forming an insulating layer at a given depth that divides the first semiconductor layer into a plurality of device regions between the insulating layer and the top surface and a plurality of body regions between the insulating layer and the first and second dielectric layers such that each of the body regions is aligned with one of the device regions between an adjacent pair of the dielectric regions; forming shallow trench isolation regions extending from the top surface of the first semiconductor layer; and forming a contact through each of the shallow trench isolation regions to the body regions.

Abstract translation: 要解决的问题：提供一种形成半导体结构的方法。解决方案：该方法包括以下步骤：在第二半导体层上将第一介电层与第二介电层接合在第一半导体层上; 限定从所述第一半导体层的顶表面延伸到所述第二半导体层的多个开口; 将介质区域施加到每个开口的侧壁; 外延生长第二半导体层的半导体材料岛以填充每个开口; 在给定的深度处形成绝缘层，所述绝缘层将所述第一半导体层划分成所述绝缘层和所述顶表面之间的多个器件区域以及所述绝缘层与所述第一和第二电介质层之间的多个体区域，使得 身体区域与相邻的一对电介质区域之间的器件区域之一对准; 形成从第一半导体层的顶表面延伸的浅沟槽隔离区; 以及通过每个浅沟槽隔离区域形成到身体区域的接触。

公开(公告)号：SG97224A1

公开(公告)日：2003-07-18

申请号：SG200107478

申请日：2001-11-26

Applicant: IBM

Inventor： DARREN L ANAND ,  JOHN EDWARD BARTH JR ,  JOHN ATKINSON FIFIELD ,  PAMELA SUE GILLIS ,  PETER O JAKOBSEN ,  DOUGLAS WAYNE KEMERER ,  DAVID E LACKEY ,  STEVEN FREDERICK OAKLAND ,  MICHAEL RICHARD QUELLETTE ,  WILLIAM ROBERT TONTI

IPC: H01L21/82 ,  G11C7/00 ,  G11C29/00 ,  G11C29/04 ,  H03K19/173 ,  H05K7/00

Abstract: A method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox allows a reduction in the number of fuses required to repair or customize an integrated circuit and allows fuses to be grouped outside of the macros repaired by the fuses. The remote location of fuses allows flexibility in the placement of macros having redundant repair capability, as well as a preferable grouping of fuses for both programming convenience and circuit layout facilitation. The fuses are arranged in rows and columns and represent control words and run-length compressed data to provide a greater quantity of repair points per fuse. The data can be loaded serially into shift registers and shifted to the macro locations to control the selection of redundant circuits to repair integrated circuits having defects or to customize logic.