公开(公告)号：CA1052892A

公开(公告)日：1979-04-17

申请号：CA239236

申请日：1975-11-04

Applicant: IBM

Inventor： MALAVIYA SHASHI D ,  VORA MADHUKAR B ,  WILSON WILLIAM T

IPC: H01L27/146 ,  H01L31/112 ,  H01L31/10 ,  H01L27/14 ,  H01L29/80

Abstract: RANDOM ACCESS SOLID-STATE IMAGE SENSOR WITH NON-DESTRUCTIVE READ-OUT A solid state analog image sensor is disclosed in which the video input to the sensor is stored as a charge on a floating gate in a cell. The cell itself consists of a single J-FET with Schottky barrier contact to the metal word line. All associated address and drive/sense circuits are located around the active cell area. By filling up the active area with only the J-FET's and relegating the rest of the circuitry to the peripheral, inactive region, high picture resolution is obtained.

公开(公告)号：FR2296267A1

公开(公告)日：1976-07-23

申请号：FR7534721

申请日：1975-11-05

Applicant: IBM

Inventor： MALAVIYA SHASHI D ,  VORA MADHUKAR B ,  WILSON WILLIAM T

IPC: H01L27/146 ,  H01L31/112 ,  H01L27/14 ,  H01J29/45

Abstract: A solid state analog image sensor is disclosed in which the video input to the sensor is stored as a charge on a floating gate in a cell. The cell itself consists of a single J-FET with Schottky barrier contact to the metal word line. All associated address and drive/sense circuits are located around the active cell area. By filling up the active area with only the J-FET's and relegating the rest of the circuitry to the peripheral, inactive region, high picture resolution is obtained.

公开(公告)号：DE2553203A1

公开(公告)日：1976-07-08

申请号：DE2553203

申请日：1975-11-27

Applicant: IBM

Inventor： MALAVIYA SHASHI DHAR ,  VORA MADHUKAR B ,  WILSON WILLIAM T

IPC: H01L27/146 ,  H01L31/112 ,  H04N3/14 ,  H01L27/08

Abstract: A solid state analog image sensor is disclosed in which the video input to the sensor is stored as a charge on a floating gate in a cell. The cell itself consists of a single J-FET with Schottky barrier contact to the metal word line. All associated address and drive/sense circuits are located around the active cell area. By filling up the active area with only the J-FET's and relegating the rest of the circuitry to the peripheral, inactive region, high picture resolution is obtained.