公开(公告)号：FR2287060A1

公开(公告)日：1976-04-30

申请号：FR7526333

申请日：1975-08-19

Applicant: IBM

Inventor： PAAL GABOR ,  WUSTENHAGEN JURGEN F

IPC: G03F7/32 ,  G03F7/039 ,  G03F7/30 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H05K3/06 ,  G03F1/02 ,  G03C1/68

Abstract: Baked novolak resin based positive photoresists are either developed after exposure or stripped, following the use of the pattern resist layer as an etch mask, in aqueous solutions of a combination of permanganate and phosphoric acid.