公开(公告)号：FR2357070A1

公开(公告)日：1978-01-27

申请号：FR7717620

申请日：1977-06-03

Applicant: IBM

Inventor： PAAL GABOR ,  SCHACKERT KLAUS

IPC: H01L21/31 ,  H01L23/522 ,  H01L21/312 ,  H01L21/768 ,  H01L21/90

Abstract: Disclosed is a process for passivating a first metallization pattern on a semiconductor substrate and providing a substantially planar quartz surface for subsequent metallization patterns in which a first polymer layer is applied over a first metallization layer and other portions of the substrate, providing a substantially planar surface. After a first curing, the first layer of polymer material is removed down to a thin layer of defined thickness over the first metallization pattern and, after a second curing, a quartz layer is applied over the polymer layer forming a substantially planar quartz top surface. Also disclosed is a method of forming via holes to the first metallization pattern as well as particular photoresist resins.

公开(公告)号：CA1075523A

公开(公告)日：1980-04-15

申请号：CA256223

申请日：1976-06-30

Applicant: IBM

Inventor： MORITZ HOLGER ,  PAAL GABOR

IPC: G03C5/00

Abstract: METHOD OF CONVERTING A POSITIVE PHOTORESIST LAYER TO A NEGATIVE PHOTORESIST IMAGE A normally positive acting photoresist material is made operable as a negative acting material by the additional steps following image-wise exposure, of heating the layer and subsequently blanket exposing it to light prior to developing it with an alkaline solvent.

公开(公告)号：CA1067332A

公开(公告)日：1979-12-04

申请号：CA236873

申请日：1975-10-02

Applicant: IBM

Inventor： PAAL GABOR ,  WUESTENHAGEN JUERGEN F

IPC: G03F7/32 ,  G03F7/039 ,  G03F7/30 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H05K3/06 ,  G03C5/00 ,  G03F7/08

Abstract: Baked novolak resin based positive photoresists are either developed after exposure or stripped, following the use of the pattern resist layer as an etch mask, in aqueous solutions of a combination of permanganate and phosphoric acid.

公开(公告)号：DE2967291D1

公开(公告)日：1984-12-13

申请号：DE2967291

申请日：1979-11-27

Applicant: IBM

Inventor： HAVAS JANOS ,  PAAL GABOR

IPC: H01L21/3205 ,  H01L21/027 ,  H01L21/28 ,  H01L21/306 ,  H01L21/00

Abstract: A method for depositing thin film patterns of very small and controllable dimensions in the fabrication of integrated circuits which avoids edge tearing of the films. A non-photosensitive organic polymeric first masking layer is deposited on the integrated circuit substrate. Upon this layer is deposited a layer of silicon nitride using plasma deposition techniques employing a gaseous source. The silicon nitride layer is covered by a second masking layer, preferably an organic polymeric resist material, through which apertures are formed in preselected patterns using standard lithographic masking and etching techniques. The silicon nitride layer is then reactive ion etched with CF4 through the apertures formed in the second masking layer. The first masking layer is then etched through the apertures in the second masking layer and silicon nitride layer using reactive ion etching techniques. The etching of the first masking layer continues until the first masking layer is undercut beyond the edges of the aperture in the silicon nitride layer so that the silicon nitride layer forms an overhang of the aperture in the first masking layer. The thin film to be deposited is then applied over the resulting structure including the surface of the silicon nitride layer and the substrate exposed through the apertures. Because of the overhang, a discontinuity is formed between the thin film deposited upon the exposed surface of the substrate and that formed upon the outer surface of the silicon nitride layer so that when the first masking layer is dissolved, the film deposited upon the substrate is left without any edge tearing between it and the removed portions of the film.

公开(公告)号：FR2287060A1

公开(公告)日：1976-04-30

申请号：FR7526333

申请日：1975-08-19

Applicant: IBM

Inventor： PAAL GABOR ,  WUSTENHAGEN JURGEN F

IPC: G03F7/32 ,  G03F7/039 ,  G03F7/30 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H05K3/06 ,  G03F1/02 ,  G03C1/68

Abstract: Baked novolak resin based positive photoresists are either developed after exposure or stripped, following the use of the pattern resist layer as an etch mask, in aqueous solutions of a combination of permanganate and phosphoric acid.

公开(公告)号：FR2325076A1

公开(公告)日：1977-04-15

申请号：FR7623079

申请日：1976-07-20

Applicant: IBM

Inventor： PAAL GABOR

IPC: G03C1/72 ,  C08L61/00 ,  C08L61/04 ,  G03F7/022 ,  G03F7/039 ,  H01L21/027 ,  G03C1/495 ,  H01L21/312

Abstract: The sensitivity of a positively-acting photo-resist material contg. a PF resin and a diazonaphthaquinone inhibitor to actinic or electron irradiation is improved by addn. of a sensitiser. This is a cpd. from one of the gps: (a) unsubstd. aryl- or N-acyl-substd. arylsulphonamides of formulae Ar.SO2.NH2, Ar.SO2.NHR or Ar.SO2.CO.NHR respectively, where Ar is any aryl residue and R = alkyl or aryl, (b) N-acyl substd. carboxylic amides of formula Ar.CO.NH.CO.R1 where Ar has same meaning and R1 = alkyl or aryl, and (c) cyclic sulphonic or carboxylic amides of formulae: where Ar is again aryl. Method can be used in prepn. of positive photo-resistant coatings, partic. in connection with micro-circuitry. Previously proposed sensitisers increase the sensitivity of the coating to irradiation but seriously reduce the storage stability. Those of the invention give high contrast between irradiated and unexposed areas without this disadvantages.

公开(公告)号：FR2316625A1

公开(公告)日：1977-01-28

申请号：FR7613472

申请日：1976-04-29

Applicant: IBM

Inventor： MORITZ HOLGER ,  PAAL GABOR

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/022 ,  G03F7/085 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  G03C1/68 ,  G03F1/00

Abstract: The invention relates to a method of making a negative photoresist image on a substrate, where a normally positive working photoresist material containing 1-hydroxyethyl-2-alkyl-imidazoline is applied to a substrate, image-wise exposed with actinic radiation, heated, and blanket exposed to actinic radiation. The material which was not exposed originally is then removed with a solvent to give a negative image.