公开(公告)号：GB2487307A

公开(公告)日：2012-07-18

申请号：GB201200820

申请日：2010-11-03

Applicant: IBM

Inventor： OUYANG QIQING CHRISTINE ,  DENNARD ROBERT HEATH ,  YAU JENGBANG

IPC: H01L27/12 ,  H01L21/336 ,  H01L21/762 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor wafer structure for integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate; an electrically conductive back gate layer formed on the lower insulating layer; an upper insulating layer formed on the back gate layer; and a hybrid semiconductor-on-insulator layer formed on the upper insulating layer, the hybrid semiconductor-on-insulator layer comprising a first portion having a first crystal orientation and a second portion having a second crystal orientation.