HIGH SPEED DATA CHANNEL INCLUDING A CMOS VCSEL DRIVER, HIGH PERFORMANCE PHOTODETECTOR AND CMOS PHOTORECEIVER
    1.
    发明申请
    HIGH SPEED DATA CHANNEL INCLUDING A CMOS VCSEL DRIVER, HIGH PERFORMANCE PHOTODETECTOR AND CMOS PHOTORECEIVER 审中-公开
    高速数据通道,包括CMOS VCSEL驱动器,高性能光电转换器和CMOS光电二极管

    公开(公告)号:WO2004049527A3

    公开(公告)日:2004-10-28

    申请号:PCT/EP0313343

    申请日:2003-10-23

    Applicant: IBM IBM FRANCE

    Abstract: A high speed optical channel including an optical driver (334) and a photodetector (338) in a CMOS photoreceiver (338). The optical channel driver includes a FET driver circuit (334) driving a passive element (110) (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode (312). The VCSEL diode is biased by a bias supply. The integrated loop inductor (110) may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector (338) is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (M)

    Abstract translation: 一种在CMOS光接收器(338)中包括光驱动器(334)和光电检测器(338)的高速光通道。 光通道驱动器包括驱动无源元件(110)(例如,集成环路电感器)和垂直腔表面发射激光器(VCSEL)二极管(312)的FET驱动器电路(334)。 VCSEL二极管由偏置电源偏置。 集成环路电感器(110)可以集成在CMOS技术中,并且与FET驱动器和VCSEL二极管中的一个/两者集成在同一IC芯片上。 光电检测器(338)位于可以在绝缘体层(即SOI)上的半导体(硅)层中。 在硅层上的一个或多个超薄金属电极(M)<< 2000A)形成肖特基势垒二极管结,该结二极管结又形成了在超薄金属电极(M)和 肖特基势垒二极管结。

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