HIGH SPEED DATA CHANNEL INCLUDING A CMOS VCSEL DRIVER, HIGH PERFORMANCE PHOTODETECTOR AND CMOS PHOTORECEIVER
    1.
    发明申请
    HIGH SPEED DATA CHANNEL INCLUDING A CMOS VCSEL DRIVER, HIGH PERFORMANCE PHOTODETECTOR AND CMOS PHOTORECEIVER 审中-公开
    高速数据通道,包括CMOS VCSEL驱动器,高性能光电转换器和CMOS光电二极管

    公开(公告)号:WO2004049527A3

    公开(公告)日:2004-10-28

    申请号:PCT/EP0313343

    申请日:2003-10-23

    Applicant: IBM IBM FRANCE

    Abstract: A high speed optical channel including an optical driver (334) and a photodetector (338) in a CMOS photoreceiver (338). The optical channel driver includes a FET driver circuit (334) driving a passive element (110) (e.g., an integrated loop inductor) and a vertical cavity surface emitting laser (VCSEL) diode (312). The VCSEL diode is biased by a bias supply. The integrated loop inductor (110) may be integrated in CMOS technology and on the same IC chip as either/both of the FET driver and the VCSEL diode. The photodetector (338) is in a semiconductor (silicon) layer that may be on an insulator layer, i.e., SOI. One or more ultrathin metal electrodes (M)

    Abstract translation: 一种在CMOS光接收器(338)中包括光驱动器(334)和光电检测器(338)的高速光通道。 光通道驱动器包括驱动无源元件(110)(例如,集成环路电感器)和垂直腔表面发射激光器(VCSEL)二极管(312)的FET驱动器电路(334)。 VCSEL二极管由偏置电源偏置。 集成环路电感器(110)可以集成在CMOS技术中,并且与FET驱动器和VCSEL二极管中的一个/两者集成在同一IC芯片上。 光电检测器(338)位于可以在绝缘体层(即SOI)上的半导体(硅)层中。 在硅层上的一个或多个超薄金属电极(M)<< 2000A)形成肖特基势垒二极管结,该结二极管结又形成了在超薄金属电极(M)和 肖特基势垒二极管结。

    BRANCH STREAM COPROCESSOR
    8.
    发明专利

    公开(公告)号:CA1268555A

    公开(公告)日:1990-05-01

    申请号:CA529483

    申请日:1987-02-11

    Applicant: IBM

    Abstract: BRANCH STREAM COPROCESSOR A novel approach to reducing delays resulting from resolution of conditional branch instructions, in which such instructions are pre-executed in a coprocessor which precedes a pipeline processor and prepares an instruction stream for input to the pipeline processor. Because of this pre-execution, the input instruction stream has fewer conditional branches for the pipeline processor to resolve. Also, the coprocessor may handle address generation interlock situations which also cause execution delays in the pipeline processor.

    Enhanced modularity in heterogeneous 3D stacks

    公开(公告)号:GB2494328A

    公开(公告)日:2013-03-06

    申请号:GB201221491

    申请日:2011-04-27

    Applicant: IBM

    Abstract: Enhanced modularity in heterogeneous three-dimensional computer processing chip stacks includes a method of manufacture. The method includes preparing a host layer and integrating the host layer with at least one other layer in the stack. The host layer is prepared by forming cavities on the host layer for receiving chips pre-configured with heterogeneous properties relative to each other, disposing the chips in corresponding cavities on the host layer, and joining the chips to respective surfaces of the cavities thereby forming an element having a smooth surface with respect to the host layer and the chips.

Patent Agency Ranking