公开(公告)号：DE3374638D1

公开(公告)日：1987-12-23

申请号：DE3374638

申请日：1983-06-30

Applicant: IBM ,  IBM FRANCE

Inventor： BRUNIN ARMAND ,  DENIS BERNARD ,  BOUDON GERARD ,  MOLLIER PIERRE ,  STOPPA PHILIPPE

IPC: H01L21/822 ,  H01L21/82 ,  H01L27/04 ,  H01L27/06 ,  H03K19/003 ,  H03K19/082 ,  H03K19/084 ,  H03K19/088

Abstract: Logic inputs are applied to the cathodes of Schottky diodes (D1-Dn) whose anodes are connected together to the base of a n-p-n input transistor (T1). A supplementary input (X) from a logic circuit (1) is applied to the emitter of the transistor (T1) whose collector drives the base of an inverting n-p-n output transistir (T2). Both transistors (T1,T2) have collector-to-base antisaturation Schottky diodes (S1,S2) with higher barrier values. Prediffused diodes, transistors and resistors can be wired at the first level of metallisation to constitute the desired logic circuits. Cells can be interconnected in dense arrays at the second and third levels.