公开(公告)号：AT539447T

公开(公告)日：2012-01-15

申请号：AT02784578

申请日：2002-11-22

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： CHEN TZE-CHIANG ,  ENGEL BRETT ,  FITZSIMMONS JOHN ,  KANE TERENCE ,  LUSTIG NAFTALI ,  MCDONALD ANN ,  MCGAHAY VINCENT ,  SEO SOON-CHEON ,  STAMPER ANTHONY ,  WANG YUN ,  KALTALIOGLU ERDEM

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.