公开(公告)号：DE69632768T2

公开(公告)日：2005-07-07

申请号：DE69632768

申请日：1996-09-04

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： HO HERBERT ,  HAMMERL ERWIN ,  DOBUZINSKY DAVID M ,  PALM J HERBERT ,  FUGARDI STEPHEN ,  AJMERA ATUL ,  MOSEMAN JAMES E ,  RAMAC SAMUEL C

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/32 ,  H01L21/762 ,  H01L21/763 ,  H01L21/334

Abstract: Silicon integrated circuits use a crystalline layer of silicon nitride (Si3N4) in shallow trench isolation (STI) structures as an O2-barrier film. The crystalline Si3N4 lowers the density of electron traps as compared with as-deposited, amorphous Si3N4. Further, a larger range of low-pressure chemical-vapor deposited (LPCVD) Si3N4 films can be deposited, providing a larger processing window for thickness controllability. An LPCVD-Si3N4 film is deposited at temperatures of 720 DEG C to 780 DEG C. The deposited film is in an amorphous state. Subsequently, a high-temperatures rapid-thermal anneal in pure nitrogen or ammonia is conducted at 1050 DEG C to 1100 DEG C for 60 seconds.

公开(公告)号：DE69632768D1

公开(公告)日：2004-07-29

申请号：DE69632768

申请日：1996-09-04

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： HO HERBERT ,  HAMMERL ERWIN ,  DOBUZINSKY DAVID M ,  PALM J HERBERT ,  FUGARDI STEPHEN ,  AJMERA ATUL ,  MOSEMAN JAMES E ,  RAMAC SAMUEL C

IPC: H01L21/76 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/32 ,  H01L21/762 ,  H01L21/763 ,  H01L21/334

Abstract: Silicon integrated circuits use a crystalline layer of silicon nitride (Si3N4) in shallow trench isolation (STI) structures as an O2-barrier film. The crystalline Si3N4 lowers the density of electron traps as compared with as-deposited, amorphous Si3N4. Further, a larger range of low-pressure chemical-vapor deposited (LPCVD) Si3N4 films can be deposited, providing a larger processing window for thickness controllability. An LPCVD-Si3N4 film is deposited at temperatures of 720 DEG C to 780 DEG C. The deposited film is in an amorphous state. Subsequently, a high-temperatures rapid-thermal anneal in pure nitrogen or ammonia is conducted at 1050 DEG C to 1100 DEG C for 60 seconds.

公开(公告)号：JPH1041465A

公开(公告)日：1998-02-13

申请号：JP10727497

申请日：1997-04-24

Applicant: IBM ,  SIEMENS AG

Inventor： DOBUZINSKY DAVID MARK ,  FUGARDI STEPHEN GERARD ,  HAMMERL ERWIN ,  HO HERBERT LEI ,  RAMAC SAMUEL C ,  STRONG ALVIN WAYNE

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822

Abstract: PROBLEM TO BE SOLVED: To manufacture a high resistance resistor by using materials and a method common the those used for the integrated circuit process. SOLUTION: As a method for manufacturing a resistor element for an integrated circuit semiconductor device, and insulation film 120 formed is silicon nitride and the like is deposited first. Then, a a film 130 containing titanium is deposited on the insulation film 120. The film 130 and the insulation film 120 are heat-treated so as the diffuse titanium in the insulation film 120. As a result, titanium is diffused in the insulation film 120. Thus, a resistor element with relatively high resistance is manufactured. The merit of this method is that it can be easily integrated with the conventional integrated circuit manufacturing technologies.

公开(公告)号：JPH10214889A

公开(公告)日：1998-08-11

申请号：JP2253198

申请日：1998-01-21

Applicant: SIEMENS AG ,  IBM

Inventor： HO HERBERT ,  HAMMERL ERWIN ,  DOBUZINSKY DAVID M ,  PALM J HERBERT ,  FUGARDI STEPHEN ,  AJMERA ATUL ,  MOSEMAN JAMES F ,  RAMAC SAMUEL C

IPC: H01L21/76 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To contain a trapping center with a lower density than before conversion, by depositing an Si3 N4 covering with a specific thickness in an STI structure by the low-pressure chemical vapor deposition method, performing speedy heat annealing under specific conditions immediately after depositing the covering, and converting Si3 N4 from amorphous to a crystal material. SOLUTION: After a shallow trench is etched, a thin thermal oxide with a thickness of approximately 10nm is grown to eliminate an etching damage. Then, an Si3 N4 covering with a thickness of 5-10nm is deposited on the upper surface of an oxide layer in amorphous state at a temperature of 720-780 deg.C in a shallow trench isolation structure(STI). Then, immediately after the covering is deposited, a high-speed heat annealing is executed nearly for 60 seconds at 1,050-1,150 deg.C in pure nitrogen or ammonium and the Si3 N4 covering is converted from the amorphous state to the crystal material state of a low- temperature-hexagonal (d) Si3 N4 phase.

公开(公告)号：DE69737469T2

公开(公告)日：2007-11-29

申请号：DE69737469

申请日：1997-04-24

Applicant: SIEMENS AG ,  IBM

Inventor： DOBUZINSKY DAVID MARK ,  FUGARDI STEPHEN GERARD ,  HAMMERL ERWIN ,  HO HERBERT LEI ,  RAMAC SAMUEL C ,  STRONG ALVIN WAYNE

IPC: H01L21/3205 ,  H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8244

Abstract: According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.

公开(公告)号：DE69737469D1

公开(公告)日：2007-04-26

申请号：DE69737469

申请日：1997-04-24

Applicant: SIEMENS AG ,  IBM

Inventor： DOBUZINSKY DAVID MARK ,  FUGARDI STEPHEN GERARD ,  HAMMERL ERWIN ,  HO HERBERT LEI ,  RAMAC SAMUEL C ,  STRONG ALVIN WAYNE

IPC: H01L21/3205 ,  H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8244

Abstract: According to the preferred embodiment of the present invention, an improved resistor and method of fabrication is provided. The method for fabricating a resistive element into an integrated circuit semiconductor device comprises the steps of: depositing a dielectric film, such as silicon nitride; depositing a titanium film upon the dielectric film; and annealing the titanium and dielectric films. This causes titanium to be diffused into the dielectric film. This creates a resistive element having a relatively high resistivity. The preferred embodiment method has the advantage of being easily integrated into conventional integrated circuit fabrication techniques.