公开(公告)号：DE69836943D1

公开(公告)日：2007-03-15

申请号：DE69836943

申请日：1998-09-29

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： VARIAN KATHRYN H ,  TOBBEN DIRK ,  SENDELBACH MATTHEW

IPC: H01L21/302 ,  H01L21/3105 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/768 ,  H01L23/522

Abstract: A substantially planar surface is produced from a non-conformal device layer formed over a complex topography, which includes narrow features with narrow gaps and wide features and wide gaps. A conformal layer is deposited over the non-conformal layer. The surface is then polished to expose the non-conformal layer over the wide features. An etch selective to the non-conformal layer is then used to substantially remove the non-conformal layer over the wide features. The conformal layer is then removed, exposing the non-conformal layer. The thickness of the non-conformal layer is now more uniform as compared to before. This enables the polish to produce a planar surface with reduced dishing in the wide spaces.

公开(公告)号：DE69836943T2

公开(公告)日：2008-02-14

申请号：DE69836943

申请日：1998-09-29

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： VARIAN KATHRYN H ,  TOBBEN DIRK ,  SENDELBACH MATTHEW

IPC: H01L21/302 ,  H01L21/3105 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/768 ,  H01L23/522

Abstract: A substantially planar surface is produced from a non-conformal device layer formed over a complex topography, which includes narrow features with narrow gaps and wide features and wide gaps. A conformal layer is deposited over the non-conformal layer. The surface is then polished to expose the non-conformal layer over the wide features. An etch selective to the non-conformal layer is then used to substantially remove the non-conformal layer over the wide features. The conformal layer is then removed, exposing the non-conformal layer. The thickness of the non-conformal layer is now more uniform as compared to before. This enables the polish to produce a planar surface with reduced dishing in the wide spaces.

公开(公告)号：JPH11162987A

公开(公告)日：1999-06-18

申请号：JP27846198

申请日：1998-09-30

Applicant: SIEMENS AG ,  IBM

Inventor： VARIAN KATHRYN H ,  TOBBEN DIRK ,  SENDELBACH MATTHEW

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To produce a substantial plane where recessed transformation of wide space is reduced, by performing CMP polishing on a nonconformal layer accumulated on complicated landform comprising narrow parts accompanied with narrow gaps, wide parts, and wide gaps. SOLUTION: A nonconformal layer 160 is made on the surface of a substrate 101. Because of the nonconformality of this layer 160, thickness on the surface of a wide active region 112 is thicker than the thickness of a narrow active region 110. Polysilicon (poly) is accumulated on the surface by CVD. A conformal poly layer arises on the nonconformal layer 160 by CVD. The poly layer is flattened selectively by CMP to an oxide. For the CMP polishing, the protuberance of polysilicon is polished first, and the surface of polysilicon is flattened gradually as the material is removed from there. CMP is continued until the surface of the oxide layer 160 in the protuberance region is exposed and a flat top 179 arises.