公开(公告)号：MY134065A

公开(公告)日：2007-11-30

申请号：MYPI20022744

申请日：2002-07-19

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： CONTI RICHARD A ,  EDELSTEIN DANIEL C ,  LEE GILL Y

IPC: H01L21/31 ,  C23C16/40 ,  H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

Abstract: A METHOD IS DESCRIBED FOR FORMING A LOW-K DIELECTRIC FILM, IN PARTICULAR, A PRE-METAL DIELECTRIC (PMD) ON A SEMICONDUCTOR WAFER WHICH HAS GOOD GAP-FILLING CHARACTERISTICS. THE METHOD USES A THERMAL SUB-ATMOSPHERIC CVD PROCESS THAT INCLUDES A CARBON-CONTAINING ORGANOMETALLIC PRECUSOR SUCH AS TMCTS OR OMCTS, AN OZONE-CONTAINING GAS, AND A SOURCE OF DOPANTS FOR GETTERING ALKALI ELEMENTS AND FOR LOWERING THE REFLOW TEMPERATURE OF THE DIELECTRIC WHILE ATTAINING THE DESIRED LOW-K AND GAPFILLING PROPERTIES OF THE DIELECTRIC FILM. PHOSPHOROUS IS A PREFERRED DOPANT FOR GETTERING ALKALI ELEMENT SUCH AS SODIUM. ADDITIONAL DOPANTS FOR LOWERING THE REFLOW TEMPERATURE INCLUDE, BUT ARE NOT LIMITED TO BORON, GERMANIUM, ARSENIC, FLUORINE OR COMBINATIONS THEREOF.(FIG 3)