公开(公告)号：DE2739502A1

公开(公告)日：1979-03-08

申请号：DE2739502

申请日：1977-09-02

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD DIPL PHYS ,  GRESCHNER JOHANN DIPL PHYS DR ,  KULCKE WERNER DIPL PHYS DR ,  NEHMIZ PETER DIPL PHYS DR

IPC: H01L21/027 ,  G03F1/00 ,  G03F1/20 ,  G03F7/20 ,  H01J37/30 ,  H01L21/00 ,  H01L21/68

Abstract: A method of exposure of a target object by means of corpuscular beam shadow printing through a mask with several complementary zones wherein the beam, shiftable and tiltable about a point in the mask plane and arranged in parallel at a small distance from the target object, is first impinged upon a first of the complementary zones, then the object is shifted under a second of the complementary zones, and the positioning of the beam is changed so that any deviation of the actual position of the second area of the target object to be exposed from its nominal position is determined and compensated for by tilting the beam about a point substantially in the mask plane.

公开(公告)号：DE2939044A1

公开(公告)日：1981-04-09

申请号：DE2939044

申请日：1979-09-27

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD DIPL PHYS ,  GRESCHNER JOHANN DIPL PHYS DR ,  NEHMIZ PETER DIPL PHYS DR ,  KULCKE WERNER DIPL PHYS DR

IPC: H01J37/20 ,  H01J37/304 ,  H01L21/68 ,  H01L21/26

Abstract: The mutual alignment of mask and substrate patterns of a specific semiconductor structure are attained by use of a plurality of individual marks in a specific geometric position with respect to each other. By the arrangement of openings in the alignment pattern of the mask, the broad electron beam is split into a multitude of individual beams which interact with alignment marks on the substrate. The interaction is used to generate a coincidence signal. The signal to noise ratio of this arrangement is determined by the overall current and is comparable to that of a thin concentrated electron beam. Registration is effected in a small amount of time and the disadvantageous effects of the high current density used in the raster process are not a factor. In a preferred embodiment, the alignment pattern of the mask is a matrix with center spacings of openings increasing upon advance in two directions perpendicular to each other such that no distance can be represented by the sum of smaller distances. Alignment signals are provided by detecting either absorbed or reflected electrons. A plurality of detectors in the mask are used to detect the reflected electrons.

公开(公告)号：DE2837590A1

公开(公告)日：1980-03-13

申请号：DE2837590

申请日：1978-08-29

Applicant: IBM DEUTSCHLAND

Inventor： BOHLEN HARALD DIPL PHYS ,  ENGELKE HELMUT DIPL PHYS DR ,  GRESCHNER JOHANN DIPL PHYS DR ,  KULCKE WERNER DIPL PHYS DR ,  NEHMIZ PETER DIPL PHYS DR

IPC: H01L21/027 ,  H01J37/30 ,  H01J37/304 ,  H01L21/263 ,  H01L21/423