公开(公告)号：DE2929383A1

公开(公告)日：1981-02-12

申请号：DE2929383

申请日：1979-07-20

Applicant: IBM DEUTSCHLAND

Inventor： GSCHWENDTNER JOERG DIPL ING ,  LOEHLEIN WOLFDIETER ING GRAD

IPC: H03K5/00 ,  H03K5/02 ,  H03K19/017 ,  H03K19/0175 ,  H03K19/0185 ,  H03K19/094 ,  G11C11/40 ,  G11C7/00

Abstract: A known FET driver circuit which is to be controlled at the gate by means of relatively low TTL signals, is improved in such a manner that the source potential of the input transistors is shifted oppositely to the input signal. This leads to an increase in the effective potential difference in the signal level applied to the input transistors and thus to an improved switching speed.