公开(公告)号：DE2309186A1

公开(公告)日：1974-09-05

申请号：DE2309186

申请日：1973-02-23

Applicant: IBM DEUTSCHLAND

Inventor： FEICHT ERWIN ,  HAUG WERNER DIPL-ING ,  REMSHARDT ROLF DIPL-ING DR ,  SCHETTLER HELMUT DIPL-ING

IPC: G11C11/41 ,  G11C11/414 ,  G11C11/419 ,  H03F3/45 ,  G11C7/00

Abstract: In a monolithic semiconductor storage the bit lines are selectively connected in pairs to the inputs of a read amplifier. In their separated state the potentials of the read lines (VB) and of the associated input lines of the read amplifier (VBS1, VBS2) show the same value and are derived from a common potential (VH). Potentials VB as well as VBS1 and VBS2 are derived via the same respective number of diode voltage drops from potential VH.

公开(公告)号：DE2523853B1

公开(公告)日：1976-10-07

申请号：DE2523853

申请日：1975-05-30

Applicant: IBM DEUTSCHLAND

Inventor： MAUGATUCK KLAUS DIPL-ING ,  GRANVILLE CARRER THOMAS ,  NAJMANN KNUT DIPL-ING ,  REMSHARDT ROLF DIPL-ING DR ,  WIEDMANN SIEGFRIED DIPL-ING DR

IPC: G11C11/41 ,  G11C11/413 ,  G11C11/415 ,  H03K19/088 ,  H03M7/00 ,  G11C7/00

Abstract: A method and circuit arrangement for operating an information store, in particular a monolithic information store, whose storage cells and address circuits comprise bipolar transistors which are not continuously subjected to full power. The monolithic information store is readily fabricated by known planar process technology, has increased density, has reduced read/write times, reduced cycle time, and reduced power dissipation.