公开(公告)号：WO2004055885A8

公开(公告)日：2005-12-22

申请号：PCT/US0339766

申请日：2003-12-12

Applicant: IC MECHANICS INC

Inventor： CARLEY L RICHARD ,  HSU YU-NU ,  SANTHANAM SURESH

IPC: B81B3/00 ,  B81B7/00 ,  G01P1/02 ,  G01P15/08 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: B81B7/0077 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C1/00936 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0828

Abstract: This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer (20). The process involves extending the layers of sacrificial material (12, 16) past the horizontal boundaries of the cap layer (20). The cap layer (20) is supported by pillars (21) formed by a deposition in holes etched through the sacrificial layers (12,16), and the etchant entry holes are formed when the excess sacrificial material (12, 16) is etched away, leaving voids between the pillars (21) supporting the cap.

Abstract translation: 本发明包括一种用于在密封空腔中制造MEMS微结构的方法，其中蚀刻剂入口孔作为制造工艺的副产品而产生，而没有额外的步骤来蚀刻盖层（20）中的孔。 该方法包括将牺牲材料层（12,16）延伸超过盖层（20）的水平边界。 盖层（20）由通过蚀刻通过牺牲层（12,16）蚀刻的孔中的沉积形成的柱支撑（21），并且当多余的牺牲材料（12,16）被蚀刻掉时形成蚀刻剂入口孔 在支撑盖子的支柱（21）之间留下空隙。

公开(公告)号：WO2004055885A3

公开(公告)日：2004-09-16

申请号：PCT/US0339766

申请日：2003-12-12

Applicant: IC MECHANICS INC

Inventor： CARLEY L RICHARD ,  HSU YU-NU ,  SANTHANAM SURESH

IPC: B81B3/00 ,  B81B7/00 ,  G01P1/02 ,  G01P15/08 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: B81B7/0077 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C1/00936 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0828

Abstract: This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer (20). The process involves extending the layers of sacrificial material (12, 16) past the horizontal boundaries of the cap layer (20). The cap layer (20) is supported by pillars (21) formed by a deposition in holes etched through the sacrificial layers (12,16), and the etchant entry holes are formed when the excess sacrificial material (12, 16) is etched away, leaving voids between the pillars (21) supporting the cap.

Abstract translation: 本发明包括一种用于在密封空腔中制造MEMS微结构的方法，其中蚀刻剂入口孔作为制造工艺的副产品而产生，而没有额外的步骤来蚀刻盖层（20）中的孔。 该方法包括将牺牲材料层（12,16）延伸超过盖层（20）的水平边界。 盖层（20）由通过蚀刻通过牺牲层（12,16）蚀刻的孔中的沉积形成的柱支撑（21），并且当多余的牺牲材料（12,16）被蚀刻掉时形成蚀刻剂入口孔 在支撑盖子的支柱（21）之间留下空隙。

公开(公告)号：AU2003299617A1

公开(公告)日：2004-07-09

申请号：AU2003299617

申请日：2003-12-12

Applicant: IC MECHANICS INC

Inventor： SANTHANAM SURESH ,  CARLEY L RICHARD ,  HSU YU-NU

IPC: B81B3/00 ,  B81B7/00 ,  G01P1/02 ,  G01P15/08 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

Abstract: This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer. The process involves extending the layers of sacrificial material past the horizontal boundaries of the cap layer. The cap layer is supported by pillars formed by a deposition in holes etched through the sacrificial layers, and the etchant entry holes are formed when the excess sacrificial material is etched away, leaving voids between the pillars supporting the cap.

公开(公告)号：AU2003299617A8

公开(公告)日：2004-07-09

申请号：AU2003299617

申请日：2003-12-12

Applicant: IC MECHANICS INC

Inventor： CARLEY L RICHARD ,  SANTHANAM SURESH ,  HSU YU-NU

IPC: H01L21/44 ,  B81B3/00 ,  B81B7/00 ,  G01P1/02 ,  G01P15/08 ,  H01L21/48 ,  H01L21/50

Abstract: This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer. The process involves extending the layers of sacrificial material past the horizontal boundaries of the cap layer. The cap layer is supported by pillars formed by a deposition in holes etched through the sacrificial layers, and the etchant entry holes are formed when the excess sacrificial material is etched away, leaving voids between the pillars supporting the cap.

公开(公告)号：EP1584105A4

公开(公告)日：2011-06-22

申请号：EP03799906

申请日：2003-12-12

Applicant: IC MECHANICS INC

Inventor： CARLEY L RICHARD ,  HSU YU-NU ,  SANTHANAM SURESH

IPC: B81B3/00 ,  B81B7/00 ,  G01P1/02 ,  G01P15/08 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: B81B7/0077 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C1/00936 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0828