公开(公告)号：EP2676923A1

公开(公告)日：2013-12-25

申请号：EP12172788.7

申请日：2012-06-20

Applicant: IMEC

Inventor： Severi, Simone ,  Verbist, Agnes

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81B2207/015 ,  B81B2207/03 ,  B81C2203/0771 ,  G05D23/1928 ,  G05D23/20 ,  G05D23/24 ,  H03H3/0073 ,  H03H3/0076

Abstract: The invention is related to a method for producing parallel conductive lines on the surface of a MEMS device. In the method of the invention, a first conductive line is produced, followed by the deposition and planarization of a dielectric layer (such as an oxide layer), the formation of a trench in said dielectric layer, the filling of said trench with a conductive material and the planarization of said material, to obtain a second conductive line formed by the filled trench. The production technique allows to produce lines at a mutual distance of less than 500nm and having a width of less than 500nm, without losing the control over the width definition of the lines.

Abstract translation: 本发明涉及一种用于MEMS装置的表面上的生产传导平行线的方法。 在发明的方法中，第一导电线产生时，随之而来的是介电层的沉积和平坦化（颜色：诸如氧化层上），沟槽的所述介电层的形成，所述沟槽的填充有导电 材料和所述材料的平坦化，以获得由所述填充沟槽形成的第二导线。 生产技术允许在小于500nm的相互距离和具有小于500nm的宽度，以产生线条，而不会丢失在定义线的宽度的控制。

公开(公告)号：EP1201604B1

公开(公告)日：2010-04-07

申请号：EP01870213.4

申请日：2001-10-08

Applicant: IMEC ,  Eastman Kodak Company

Inventor： Wivrouw, Ann ,  De Vries, Atze ,  De Moor, Piet ,  Haspelagh, Luc ,  Parmentier, Brigitte ,  Verbist, Agnes ,  Anagnostopoulos, Constantine

IPC: B81C1/00 ,  H01L29/04

CPC classification number: B81C1/005