公开(公告)号：WO2008053008A3

公开(公告)日：2008-06-19

申请号：PCT/EP2007061731

申请日：2007-10-31

Applicant: IMEC INTER UNI MICRO ELECTR ,  ASML NETHERLANDS BV ,  WITVROUW ANN ,  HASPESLAGH LUC

Inventor： WITVROUW ANN ,  HASPESLAGH LUC

IPC: B81C1/00

CPC classification number: H01L21/324 ,  B81C1/00246 ,  B81C2203/0735 ,  Y10T428/24612

Abstract: The present invention provides a method for manufacturing micromachined devices on a substrate (10) comprising electrical circuitry, the micromachined devices comprising at least one micromachined structure, without affecting the underlying electrical circuitry. The method comprises providing a protection layer (15) on the substrate (10); providing on the protection layer (15) a plurality of patterned layers for forming the at least one micromachined structure, the plurality of patterned layers comprising at least one sacrificial layer (18); and thereafter removing at least a portion of the sacrificial layer (18) to release the at least one micromachined structure. The method furthermore comprises, before providing the protection layer (15), annealing the substrate (10) at a temperature higher than a highest temperature used during manufacturing of the micromachined device, annealing being for preventing gas formation underneath the protection layer (15) during subsequent manufacturing steps. The present invention also provides a micromachined device obtained by the method according to embodiments of the present invention.

Abstract translation: 本发明提供了一种用于在包括电路的衬底（10）上制造微加工器件的方法，所述微加工器件包括至少一个微加工结构，而不影响下面的电路。 该方法包括在衬底（10）上提供保护层（15）; 在所述保护层（15）上设置多个用于形成所述至少一个微机械加工结构的图案化层，所述多个图案化层包括至少一个牺牲层（18）; 然后去除所述牺牲层（18）的至少一部分以释放所述至少一个微加工结构。 该方法还包括在提供保护层（15）之前，在高于在微加工装置的制造期间使用的最高温度的温度下对衬底（10）退火，用于在保护层（15）的下方防止形成气体的退火 后续制造步骤。 本发明还提供了通过根据本发明的实施例的方法获得的微加工装置。

公开(公告)号：DE602005006093D1

公开(公告)日：2008-05-29

申请号：DE602005006093

申请日：2005-02-21

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： HASPESLAGH LUC ,  ROSMEULEN MAARTEN

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/108 ,  H01L27/12 ,  H01L29/78

公开(公告)号：DE69619321T2

公开(公告)日：2002-10-10

申请号：DE69619321

申请日：1996-08-07

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  HASPESLAGH LUC ,  DEFERM LUDO ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: G11C5/14 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115 ,  G11C16/06

Abstract: Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This concept requires a program gate in the field oxide region which serves to capacitively couple a high voltage to the floating gates. Thus a very high injection current is established during programming. This additional program gate, however, increases the cell area considerably. The present disclosure shows a contactless 5V-only Flash EEPROM array configuration that relies on shared program lines in order to minimize the area overhead that is caused by this program gate. Furthermore, a memory array with shared wordlines is presented which further enhances the density achievable.

公开(公告)号：DE69636178D1

公开(公告)日：2006-06-29

申请号：DE69636178

申请日：1996-08-07

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  HASPESLAGH LUC ,  DEFERM LUDO ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: G11C16/14 ,  G11C5/14 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115

Abstract: Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This concept requires a program gate in the field oxide region which serves to capacitively couple a high voltage to the floating gates. Thus a very high injection current is established during programming. This additional program gate, however, increases the cell area considerably. The present disclosure shows a contactless 5V-only Flash EEPROM array configuration that relies on shared program lines in order to minimize the area overhead that is caused by this program gate. Furthermore, a memory array with shared wordlines is presented which further enhances the density achievable.

公开(公告)号：AT213562T

公开(公告)日：2002-03-15

申请号：AT96870103

申请日：1996-08-07

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  HASPESLAGH LUC ,  DEFERM LUDO ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: G11C5/14 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115 ,  G11C16/06

Abstract: Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This concept requires a program gate in the field oxide region which serves to capacitively couple a high voltage to the floating gates. Thus a very high injection current is established during programming. This additional program gate, however, increases the cell area considerably. The present disclosure shows a contactless 5V-only Flash EEPROM array configuration that relies on shared program lines in order to minimize the area overhead that is caused by this program gate. Furthermore, a memory array with shared wordlines is presented which further enhances the density achievable.

公开(公告)号：DE602005006093T2

公开(公告)日：2009-05-20

申请号：DE602005006093

申请日：2005-02-21

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： HASPESLAGH LUC ,  ROSMEULEN MAARTEN

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/108 ,  H01L27/12 ,  H01L29/78

公开(公告)号：AT392716T

公开(公告)日：2008-05-15

申请号：AT05447039

申请日：2005-02-21

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： HASPESLAGH LUC ,  ROSMEULEN MAARTEN

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/108 ,  H01L27/12 ,  H01L29/78

公开(公告)号：DE69636178T2

公开(公告)日：2007-03-29

申请号：DE69636178

申请日：1996-08-07

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  HASPESLAGH LUC ,  DEFERM LUDO ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: G11C16/14 ,  G11C5/14 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115

Abstract: Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This concept requires a program gate in the field oxide region which serves to capacitively couple a high voltage to the floating gates. Thus a very high injection current is established during programming. This additional program gate, however, increases the cell area considerably. The present disclosure shows a contactless 5V-only Flash EEPROM array configuration that relies on shared program lines in order to minimize the area overhead that is caused by this program gate. Furthermore, a memory array with shared wordlines is presented which further enhances the density achievable.

公开(公告)号：DE69619321D1

公开(公告)日：2002-03-28

申请号：DE69619321

申请日：1996-08-07

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： VAN HOUDT JAN ,  HASPESLAGH LUC ,  DEFERM LUDO ,  GROESENEKEN GUIDO ,  MAES HERMAN

IPC: G11C5/14 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  H01L27/115 ,  G11C16/06

Abstract: Fast 5V-only programming of a Flash EEPROM cell or array of such cells is disclosed. Use is made of an enhanced source-side injection mechanism. This concept requires a program gate in the field oxide region which serves to capacitively couple a high voltage to the floating gates. Thus a very high injection current is established during programming. This additional program gate, however, increases the cell area considerably. The present disclosure shows a contactless 5V-only Flash EEPROM array configuration that relies on shared program lines in order to minimize the area overhead that is caused by this program gate. Furthermore, a memory array with shared wordlines is presented which further enhances the density achievable.