公开(公告)号：DE602004021465D1

公开(公告)日：2009-07-23

申请号：DE602004021465

申请日：2004-12-22

Applicant: INFINEON TECHNOLOGIES AG ,  IMEC INTER UNI MICRO ELECTR

Inventor： ROSMEULEN MAARTEN

IPC: H01L21/8247 ,  H01L29/792 ,  G11C11/34 ,  G11C11/56 ,  G11C13/02 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/115 ,  H01L27/12 ,  H01L29/78 ,  H01L29/788

Abstract: The present invention is related to a semiconductor device, comprising €ƒ€ƒ€ƒ a first semiconductor structure (16) in electrical contact with a first contact region (11), €ƒ€ƒ€ƒ a second semiconductor structure (17) in electrical contact with a second contact region (12), €ƒ€ƒ€ƒ said first semiconductor structure (16) and said second semiconductor structure (17) being in electrical contact with each-other along an interface, characterized in that said device further comprises a means (3, 4) for modulating the conductivity in at least one of said semiconductor structures, so that the conductivity varies along said interface, in such a way that if current flows across said interface, said current can flow only at a predetermined position (24) along said interface, and substantially no current can flow at either side of said predetermined position.

公开(公告)号：AT433604T

公开(公告)日：2009-06-15

申请号：AT04447293

申请日：2004-12-22

Applicant: IMEC INTER UNI MICRO ELECTR ,  INFINEON TECHNOLOGIES AG

Inventor： ROSMEULEN MAARTEN

IPC: H01L21/8247 ,  H01L29/792 ,  G11C11/34 ,  G11C11/56 ,  G11C13/02 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/115 ,  H01L27/12 ,  H01L29/78 ,  H01L29/788

Abstract: The present invention is related to a semiconductor device, comprising €ƒ€ƒ€ƒ a first semiconductor structure (16) in electrical contact with a first contact region (11), €ƒ€ƒ€ƒ a second semiconductor structure (17) in electrical contact with a second contact region (12), €ƒ€ƒ€ƒ said first semiconductor structure (16) and said second semiconductor structure (17) being in electrical contact with each-other along an interface, characterized in that said device further comprises a means (3, 4) for modulating the conductivity in at least one of said semiconductor structures, so that the conductivity varies along said interface, in such a way that if current flows across said interface, said current can flow only at a predetermined position (24) along said interface, and substantially no current can flow at either side of said predetermined position.

公开(公告)号：DE602005006093D1

公开(公告)日：2008-05-29

申请号：DE602005006093

申请日：2005-02-21

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： HASPESLAGH LUC ,  ROSMEULEN MAARTEN

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/108 ,  H01L27/12 ,  H01L29/78

公开(公告)号：DE602005006093T2

公开(公告)日：2009-05-20

申请号：DE602005006093

申请日：2005-02-21

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： HASPESLAGH LUC ,  ROSMEULEN MAARTEN

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/108 ,  H01L27/12 ,  H01L29/78

公开(公告)号：AT392716T

公开(公告)日：2008-05-15

申请号：AT05447039

申请日：2005-02-21

Applicant: IMEC INTER UNI MICRO ELECTR

Inventor： HASPESLAGH LUC ,  ROSMEULEN MAARTEN

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/108 ,  H01L27/12 ,  H01L29/78