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公开(公告)号：AU2003250940A1
公开(公告)日：2004-02-02
申请号：AU2003250940
申请日：2003-07-11
Applicant: INFINEON TECHNOLOGIES AG
Inventor： MEISTER THOMAS , ROMANYUK ANDRIY , SCHAFER HERBERT , BOCK JOSEF
IPC: H01L21/28 , H01L21/331 , H01L29/167 , H01L29/417 , H01L29/423 , H01L29/732
Abstract: A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance.
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