公开(公告)号：WO2004008543A9

公开(公告)日：2004-10-07

申请号：PCT/EP0307553

申请日：2003-07-11

Applicant: INFINEON TECHNOLOGIES AG ,  BOECK JOSEF ,  MEISTER THOMAS ,  ROMANYUK ANDRIY ,  SCHAEFER HERBERT

Inventor： BOECK JOSEF ,  MEISTER THOMAS ,  ROMANYUK ANDRIY ,  SCHAEFER HERBERT

IPC: H01L21/28 ,  H01L21/331 ,  H01L29/167 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732

CPC classification number: H01L29/41708 ,  H01L29/167 ,  H01L29/42304 ,  H01L29/732

Abstract: According to the invention, the base resistance may be reduced and thus a low-resistance base electrode of a bipolar transistor produced, whereby a polysilicon layer is used as base electrode (2) in which impurity atoms, in particular C atoms are applied, which provide a high density of lattice holes in the polysilicon layer.

Abstract translation: 为了降低基极电阻，从而实现了双极晶体管作为基极电极（2）的低电阻基极电极时，多晶硅层，是在国外原子，特别是C原子，被引入，其引起晶格空位的在多晶硅层的高密度。

公开(公告)号：AU2003250940A1

公开(公告)日：2004-02-02

申请号：AU2003250940

申请日：2003-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEISTER THOMAS ,  ROMANYUK ANDRIY ,  SCHAFER HERBERT ,  BOCK JOSEF

IPC: H01L21/28 ,  H01L21/331 ,  H01L29/167 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732

Abstract: A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance.

公开(公告)号：DE10231407B4

公开(公告)日：2007-01-11

申请号：DE10231407

申请日：2002-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROMANYUK ANDRIY ,  MEISTER THOMAS ,  BOECK JOSEF ,  SCHAEFER HERBERT

IPC: H01L21/28 ,  H01L29/732 ,  H01L21/331 ,  H01L29/167 ,  H01L29/417 ,  H01L29/423

Abstract: A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance.

公开(公告)号：DE10231407A1

公开(公告)日：2004-02-19

申请号：DE10231407

申请日：2002-07-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROMANYUK ANDRIY ,  MEISTER THOMAS ,  BOECK JOSEF ,  SCHAEFER HERBERT

IPC: H01L21/28 ,  H01L21/331 ,  H01L29/167 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732

Abstract: A bipolar transistor and method of making a bipolar transistor is disclosed. In one embodiment, the bipolar transistor includes a polysilicon layer into which impurity atoms are inserted, thereby reducing the layer resistance.