公开(公告)号：DE10018015A1

公开(公告)日：2001-10-25

申请号：DE10018015

申请日：2000-04-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KERSCH ALFRED ,  BRINKMANN RALF-PETER

IPC: C23C14/35 ,  C23C16/50 ,  H01J37/32 ,  C23C14/34 ,  C23C16/513 ,  B01J19/08

Abstract: An arrangement for carrying out a plasma-based process includes a process chamber (1) in which a plasma can be generated, a substrate carrier (4) positioned within the process chamber (1) and on which a substrate (3) with a substrate upper face (5) is arranged. A magnetic field can be generated in the process chamber (1) between the plasma (2) and the substrate upper face (5) and has a magnetic field component (6) extending parallel to the substrate upper face (5). The magnetic field component (6) specifically rotates about an axis perpendicular to the upper face (5) of the substrate, and is generated by a coil (9) carrying a current. More specifically, the magnetic field component (6) is generated using a permanent magnet (10).