3.
    发明专利
    未知

    公开(公告)号:DE102004029200A1

    公开(公告)日:2006-01-12

    申请号:DE102004029200

    申请日:2004-06-16

    Abstract: The invention relates a substrate for a package for an electronic circuit and methods for packaging an electronic circuit with a substrate. The substrate comprises at least one conduction region and an activation region arranged within the substrate. The activation region is generally in contact with the conduction region and is configured to change its electrical resistance when activation occurs.

    6.
    发明专利
    未知

    公开(公告)号:DE102004029200B4

    公开(公告)日:2006-10-19

    申请号:DE102004029200

    申请日:2004-06-16

    Abstract: The invention relates a substrate for a package for an electronic circuit and methods for packaging an electronic circuit with a substrate. The substrate comprises at least one conduction region and an activation region arranged within the substrate. The activation region is generally in contact with the conduction region and is configured to change its electrical resistance when activation occurs.

    7.
    发明专利
    未知

    公开(公告)号:DE10331607A1

    公开(公告)日:2005-02-17

    申请号:DE10331607

    申请日:2003-07-12

    Inventor: DICKMANN RORY

    Abstract: One embodiment of the invention provides an output driver for an integrated circuit. The output driver has a driver circuit for driving an input signal onto an output line. The driver circuit is dimensioned in such a way as to supply a current intensity dependent on the input signal to be driven and/or a potential dependent on the input signal to be driven on the output line. The current value and/or the potential value lie in a current intensity range and/or potential range defined by a predetermined specification. The driver strength of the driver circuit may be set in accordance with a control signal. A measuring circuit is provided to measure the current intensity of the current flowing on the output line and/or the potential of the output line. A control circuit serves for setting the driver strength of the driver circuit so that the potential on the output line is set to a potential value and/or the current intensity is set to a current value, wherein the set potential value and the set current value may lie in a lower power range of the current intensity range and/or potential range prescribed by the specification.

    8.
    发明专利
    未知

    公开(公告)号:DE10331607B4

    公开(公告)日:2007-02-15

    申请号:DE10331607

    申请日:2003-07-12

    Inventor: DICKMANN RORY

    Abstract: One embodiment of the invention provides an output driver for an integrated circuit. The output driver has a driver circuit for driving an input signal onto an output line. The driver circuit is dimensioned in such a way as to supply a current intensity dependent on the input signal to be driven and/or a potential dependent on the input signal to be driven on the output line. The current value and/or the potential value lie in a current intensity range and/or potential range defined by a predetermined specification. The driver strength of the driver circuit may be set in accordance with a control signal. A measuring circuit is provided to measure the current intensity of the current flowing on the output line and/or the potential of the output line. A control circuit serves for setting the driver strength of the driver circuit so that the potential on the output line is set to a potential value and/or the current intensity is set to a current value, wherein the set potential value and the set current value may lie in a lower power range of the current intensity range and/or potential range prescribed by the specification.

    Method of manufacturing an integrated semiconductor circuit with a conductor structure embedded in the substrate in which the concentrations of dopant in overlapping regions are greatly varied by diffusion

    公开(公告)号:DE102004030354B3

    公开(公告)日:2006-03-09

    申请号:DE102004030354

    申请日:2004-06-23

    Inventor: DICKMANN RORY

    Abstract: The method involves providing a semiconductor substrate (10) and generating two connector regions (14,16). A provisional structure (12) for the conductor structure is formed embedded in the substrate and between the two connector regions. The provisional structure does not form any electrically conductive connections or only a connection with very low electrical conductivity. Energy is then locally provided to the provisional structure to convert the structure into a conductor structure. The conductor structure forms a connection between the connector regions which is more conductive than any connection formed by the provisional structure. The provisional structure is generated by forming a p-doped region and an n-doped region which overlaps the p-doped region. The p-doping and the n-doping in the region of overlap compensate each other for the local application of energy so that no free charge carriers are present. The provisional structure is converted into the conductive structure in that the concentrations of dopants in the overlapping region are greatly varied, to different extents, by diffusion. Independent claims also cover an integrated circuit made according to the method.

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